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Vishay N-Channel MOSFET SOT-23, 30 V, 3.6 A, Enhancement Mode, 3-Pin SI2304DDS-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SI2304DDS-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | Si2304DDS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.6A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 75mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.7W |
| Typical Gate Charge Qg @ Vgs | 4.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.8V |
Key Features
- Designed for surface mount in compact SOT-23 package.
- Features enhancement mode channel operation for efficient switching.
- Low maximum drain-source resistance of 75 mΩ.
- Can operate over a wide temperature range from -55°C to 150°C.
- Supports maximum gate-source voltage between -20 V and +20 V.
- Maximum power dissipation rated at 1.7 W ensuring reliable performance.
- Typical gate charge of 4.5 nC enables fast switching applications.
Product Description
Vishay SI2304DDS-T1-GE3 is a high-performance N-Channel MOSFET designed for efficient power switching applications. This device is housed in a compact SOT-23 package suitable for surface mount technology, making it ideal for electronic component assemblies where space is a concern.
The MOSFET features a maximum continuous drain current of 3.6 A and a maximum drain-source voltage rating of 30 V, making it suitable for low voltage power management circuits. Its enhancement mode channel operation allows for effective control and switching of power loads in various electronic devices.
With low drain-source resistance of 75 mΩ, the device minimizes power loss and heat generation during operation. It supports a maximum gate-source voltage ranging from -20 V to +20 V, providing robust gate drive flexibility.
The maximum power dissipation of 1.7 W enables reliable operation under moderate thermal conditions. It offers a typical forward voltage of 0.8 V and a typical gate charge of 4.5 nC, favoring fast switching and low switching losses in switching regulators and DC-DC converters.
The device operates across a broad temperature range from -55°C to 150°C, ensuring durability in industrial, automotive, and commercial environments where temperature extremes may occur. Its physical dimensions (length 3.04 mm, width 1.4 mm, and height 1.02 mm) facilitate integration into densely packed circuit boards.
Designed for surface mount applications in compact SOT-23 package. Low on-resistance for efficient power handling. Wide operating temperature range for versatility in harsh conditions. Supports high gate voltage for stable switching operation.
Ideal for power management in industrial, automotive, and consumer electronics. Typical gate charge enabling high-frequency switching efficiency. Maximum power dissipation to ensure device reliability. Compact dimensions for space-constrained PCB layouts.
Explore more Vishay semiconductor products in the MOSFET category on EnvMart, offering reliable components for your electronic design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.6 A.
It has a maximum drain-source voltage rating of 30 V.
The typical gate charge is 4.5 nC, which facilitates fast switching applications.
The maximum power dissipation is rated at 1.7 W, ensuring reliable performance under moderate thermal conditions.
This model is housed in a compact SOT-23 package designed for surface mount applications.
The dimensions are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
It supports a maximum gate-source voltage ranging from -20 V to +20 V.
The operating temperature range is from -55°C to 150°C, making it suitable for various environments.
The maximum drain-source resistance is 75 mΩ, which helps minimize power loss during operation.
It features an enhancement mode N-channel for efficient power switching applications.
This MOSFET is ideal for power management in industrial, automotive, and consumer electronics.
The SI2304DDS-T1-GE3 has a pin count of 3.
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