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Vishay P-Channel MOSFET 4.3 A 20 V Enhancement 3-Pin SOT-23 SI2323DDS-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SI2323DDS-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | Si2323DDS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4.3A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 75mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.7W |
| Typical Gate Charge Qg @ Vgs | 24nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -0.79V |
Key Features
- This MOSFET features an enhancement mode channel type for efficient switching.
- The maximum drain-source resistance is 75 milliohms ensuring low conduction losses.
- It supports a maximum power dissipation of 1.7 watts suitable for surface mount technology.
- Operating temperature ranges from -55°C to a maximum of 150°C for reliable performance under harsh conditions.
- The device has a typical gate charge of 24 nanocoulombs at gate-source voltage, enabling fast switching.
- Maximum gate-source voltage rated at -8 V to +8 V protects the transistor from gate overstress.
- Compact dimensions of 3.04 mm length, 1.4 mm width, and 1.02 mm height support dense PCB layouts.
Product Description
Vishay SI2323DDS-T1-GE3 is a P-Channel MOSFET transistor designed for electronic, power management, and semiconductor applications requiring efficient switching in a small footprint. Operating at a maximum continuous drain current of 4.3 A and drain-source voltage up to 20 V, it offers reliable performance in various industrial and consumer electronics projects.
The device comes in a surface-mountable SOT-23 package featuring a 3-pin configuration optimized for compact PCB designs. It employs an enhancement mode channel for controlled operation with low on-resistance of 75 milliohms, thereby reducing power loss and heat generation.
This MOSFET supports a power dissipation rating of 1.7 watts and can operate across a temperature range from -55°C to 150°C, making it suitable for demanding environmental conditions in manufacturing, automotive electronics, and industrial controls.
Its typical gate charge of 24 nanocoulombs ensures quick switching speed and improved efficiency in switching power supplies and load switching circuits. The device gate can tolerate voltages from -8 V to +8 V, protecting against voltage spikes.
The compact dimensions measure 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height, facilitating integration into dense circuit assemblies. This MOSFET features an enhancement mode channel type for efficient switching.
The maximum drain-source resistance is 75 milliohms ensuring low conduction losses. It supports a maximum power dissipation of 1.7 watts suitable for surface mount technology. Operating temperature ranges from -55°C to a maximum of 150°C for reliable performance under harsh conditions.
The device has a typical gate charge of 24 nanocoulombs at gate-source voltage, enabling fast switching. Maximum gate-source voltage rated at -8 V to +8 V protects the transistor from gate overstress. Compact dimensions of 3.04 mm length, 1.4 mm width, and 1.02 mm height support dense PCB layouts.
This product is ideal for use in industrial, electronic components, power management, automotive electronics, and semiconductor applications requiring reliable switching performance with low power loss in compact assemblies. Explore more Vishay MOSFETs and power semiconductor solutions at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.3 A.
It supports a maximum drain-source voltage of 20 V.
The typical gate charge is 24 nanocoulombs at gate-source voltage.
The maximum power dissipation rating is 1.7 watts.
The dimensions of the SOT-23 package are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.
The operating temperature range is from -55°C to a maximum of 150°C.
This MOSFET features an enhancement mode channel type.
The maximum gate-source voltage is rated at -8 V to +8 V.
The maximum drain-source resistance is 75 milliohms.
The pin count for this model is 3.
This device is designed for surface mount technology.
It is suitable for electronic, power management, automotive electronics, and semiconductor applications requiring efficient switching.
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