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Vishay Si2343CDS Type P-Channel MOSFET, 5.9 A, 30 V, Enhancement Mode, 3-Pin SOT-23 SI2343CDS-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.02mm |
| Length | 3.04mm |
| Model | SI2343CDS-T1-GE3 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | Si2343CDS |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 5.9A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 0.045Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 7nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports maximum continuous drain current of 5.9 amperes.
- Drain-source voltage rating of 30 volts for reliable operation.
- Enhancement mode channel for controlled switching.
- Compact and surface-mount 3-pin SOT-23 package for PCB integration.
- Low drain-source resistance of 0.045 ohms to reduce power losses.
- Typical gate charge of 7 nanocoulombs enables fast switching.
- Maximum power dissipation rating of 2.5 watts ensures thermal safety.
- Wide operating temperature range from -55°C to 150°C.
Product Description
Vishay SI2343CDS-T1-GE3 is a P-Channel MOSFET designed for efficient switching and amplification in electronic circuits. It features an enhancement mode channel with a maximum continuous drain current rating of 5.9 amperes and a maximum drain-source voltage of 30 volts, making it suitable for low-voltage power management applications.
The device is packaged in a compact 3-pin SOT-23 surface-mount format, facilitating easy integration onto printed circuit boards. With a low drain-source resistance of 0.045 ohms, the MOSFET offers reduced conduction losses, enhancing energy efficiency and thermal management.
This MOSFET supports fast switching due to its typical gate charge of 7 nanocoulombs and can dissipate up to 2.5 watts of power safely. It operates reliably across a wide temperature range from -55°C to 150°C, suitable for diverse industrial and commercial electronic environments.
Compliant with IEC 61249-2-21 and RoHS 2002/95/EC standards, the SI2343CDS-T1-GE3 ensures environmental and quality assurances for modern electronic applications. Its small form factor combined with robust electrical characteristics makes it ideal for power regulation, signal switching, and other semiconductor device roles in electronic components, power & connectors, and discrete semiconductor systems.
Supports maximum continuous drain current of 5.9 amperes. Drain-source voltage rating of 30 volts for reliable operation. Enhancement mode channel for controlled switching. Compact and surface-mount 3-pin SOT-23 package for PCB integration.
Low drain-source resistance of 0.045 ohms to reduce power losses. Typical gate charge of 7 nanocoulombs enables fast switching. Maximum power dissipation rating of 2.5 watts ensures thermal safety. Wide operating temperature range from -55°C to 150°C.
Compliant with IEC 61249-2-21 and RoHS 2002/95/EC standards. Manufactured in China with high quality semiconductor processes.
This product is suitable for use in industrial, electronic manufacturing, laboratory, and commercial power management applications. Explore further Vishay MOSFET products in the Electronics & Electricals category at EnvMart for a comprehensive component selection.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5.9 amperes.
It has a maximum drain-source voltage rating of 30 volts.
The typical gate charge is 7 nanocoulombs, allowing for fast switching.
The dimensions are 3.04mm in length, 1.4mm in width, and 1.02mm in height.
It has a maximum power dissipation rating of 2.5 watts.
The drain-source resistance is 0.045 ohms, which helps reduce power losses.
The operating temperature range is from -55°C to 150°C.
It is packaged in a compact 3-pin SOT-23 surface-mount format.
The channel type is P-Channel, designed for enhancement mode operation.
It is compliant with IEC 61249-2-21 and RoHS 2002/95/EC standards.
The maximum gate-source voltage is -20V to +20V.
This model is suitable for power management applications, signal switching, and other roles in electronic circuits.
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