Vishay P-Channel MOSFET, 4 A Continuous Drain Current, 20 V Drain Source Voltage, 2.8 W Power Dissipation SI1441EDH-T1-GE3

Vishay SI1441EDH-T1-GE3 is a P-Channel MOSFET designed for efficient power switching and amplification applications in the electronics industry. With a continuous drain current of 4 A and a maximum drain-source voltage of 20 V, this device supports medium power circuits in consumer electronics, industrial controls, and embedded systems. Its compact 6-pin SC-70 surface-mount package allows for space-saving PCB designs while ensuring thermal and electrical stability with a power dissipation rating of 2.8 W.

The enhancement mode channel ensures precise switching behavior suitable for power management tasks. It features a low maximum drain-source resistance (Rds) of 100 milliohms, minimizing conduction losses and enhancing overall efficiency. The MOSFET supports a wide operating temperature range from -55°C to 150°C, suitable for varied environmental conditions including industrial and commercial applications.

Typical gate charge of 22 nC facilitates fast switching speeds, making it ideal for switching regulators and load switching circuits. The gate source voltage tolerance of ±10 V provides strong gate protection against voltage spikes. The device’s forward voltage of -1.2 V further improves electrical performance in switching roles.

Dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height contribute to integration in compact assemblies. Although it does not meet automotive standards, it remains suitable for a broad range of power and signal electronic functions. The product is manufactured in China and supplied on reels for efficient production line integration.

This MOSFET operates in enhancement channel mode with a P-Channel type. Maximum power dissipation is rated at 2.8 W for reliable performance. Maximum drain source resistance (Rds) is 100 milliohms ensuring efficient conduction.

Operates within a temperature range from -55°C up to 150°C. Designed for surface mount applications to facilitate PCB assembly. Typical gate charge at Vgs is 22 nC, supporting fast switching. Forward voltage is -1.2 V enhancing device efficiency.

Compact dimensions with length 2.2 mm, width 1.35 mm, and height 1 mm. Maximum gate source voltage ranges from -10 V to +10 V to protect gate integrity. Manufactured in China with no automotive certification.

Ideal for industrial and commercial electronics, this Vishay MOSFET fits well in circuits requiring reliable medium power switching with small physical footprint. Explore EnvMart's Electronics & Electricals category for more semiconductor and discrete component solutions.