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Vishay P-Channel Enhancement MOSFET 60 V, 5.1 A, 3-Pin TO-252 Surface Mount IRFR9014TRPBF

Category MOSFETs Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 2.38mm
Length 6.73mm
Model IRFR9014TRPBF
Width 6.22mm
Mount Type Surface
Series IRFR
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 5.1A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 500mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 25W
Typical Gate Charge Qg @ Vgs 12nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -5.5V

Key Features

  • Maximum continuous drain current of 5.1 A ensures efficient current handling.
  • Maximum drain-source voltage of 60 V suitable for medium power switching.
  • 3-pin TO-252 package enables compact and reliable mounting.
  • Low drain-source resistance of 500 mΩ improves conduction efficiency.
  • Maximum power dissipation of 25 W allows high thermal endurance.
  • Wide operating temperature range from -55°C to 150°C supports harsh environments.
  • Typical gate charge of 12 nC at Vgs facilitates fast switching performance.
  • Maximum gate-source voltage rating of -20 V to +20 V ensures device robustness.

Product Description

Vishay IRFR9014TRPBF is a P-Channel Enhancement MOSFET with a maximum continuous drain current of 5.1 amperes and a maximum drain-source voltage rating of 60 volts. Packaged in a TO-252 3-pin surface mount configuration, this MOSFET is engineered for efficient switching and power management in various electronic systems.

This device features a low drain-source resistance of 500 milliohms, which contributes to minimizing conduction losses and improving circuit efficiency. It supports a maximum power dissipation of 25 watts, allowing it to sustain significant thermal loads during operation.

Designed to operate reliably over a wide temperature range from -55°C to 150°C, the IRFR9014TRPBF is suitable for demanding industrial and electronic applications. It possesses a typical gate charge of 12 nanocoulombs at a gate-source voltage of 12 V, enabling rapid switching speeds and enhanced device response.

The MOSFET’s maximum gate-source voltage tolerance of -20 V to +20 V ensures robust performance under diverse circuit conditions. Physically, the component measures 6.73 mm in length, 6.22 mm in width, and stands 2.38 mm tall, making it appropriate for compact surface mount PCB designs.

Applications include power management, switching circuits, and other electronic uses requiring reliable, high-performance MOSFETs. Vishay, a leader in semiconductor manufacturing, ensures quality and durability for this device.

Maximum continuous drain current: 5.1 A. Maximum drain-source voltage: 60 V. Package: 3-pin TO-252 surface mount. Low drain-source resistance (Rds): 500 mΩ. Maximum power dissipation: 25 W. Operating temperature range: -55°C to 150°C.

Typical gate charge: 12 nC at Vgs. Gate-source voltage range: -20 V to +20 V. Dimensions (LxWxH): 6.73 mm x 6.22 mm x 2.38 mm. Non-automotive standard MOSFET. Explore more Vishay MOSFET products and electronic components at EnvMart for your industrial and commercial applications.

Vishay P-Channel Enhancement MOSFET 60 V, 5.1 A, 3-Pin TO-252 Surface Mount IRFR9014TRPBF
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Frequently Asked Questions

The maximum continuous drain current of the IRFR9014TRPBF is 5.1 A.

This model has a maximum drain-source voltage rating of 60 V.

It is packaged in a 3-pin TO-252 surface mount configuration.

The low drain-source resistance (Rds) is 500 mΩ, which helps improve conduction efficiency.

The maximum power dissipation is 25 W, allowing for high thermal endurance during operation.

It operates over a wide temperature range from -55°C to 150°C.

The typical gate charge is 12 nC at a gate-source voltage of 12 V.

The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.

The maximum gate-source voltage rating is -20 V to +20 V.

This model features a P-Channel enhancement type channel.

It is suitable for power management, switching circuits, and other electronic applications requiring reliable MOSFET performance.

The country of origin for this MOSFET is India.

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