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Vishay Silicon Junction Diode, Single 8 A, 2-Pin, 500 V TO-220 FES8HT-E3/45
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 15.32mm |
| Length | 10.54mm |
| Model | FES8HT-E3/45 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 125A |
| Maximum Forward Voltage Vf | 1.5V |
| Peak Reverse Recovery Time trr | 50ns |
| Maximum Forward Current If | 8A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 500V |
| Infineon Silicon Diode, Single, 7.5 A, 2-Pin 650 V TO-220 IDV15E65D2XKSA1Brand | Infineon |
Key Features
- Constructed with TO-220 package for robust through-hole mounting.
- Features very fast reverse recovery time of 50 nanoseconds ensuring high switching efficiency.
- Maximum forward voltage drop is 1.5 V for optimal power loss control.
- Operates reliably in temperature ranges from -55°C to 150°C.
- Capable of peak non-repetitive forward surge current of 125 A.
- Compact dimensions with length 10.54 mm, height 15.32 mm, and width 4.7 mm.
- Widely used in switched mode power supplies, inverters, and freewheeling diode applications.
- Manufactured in China under Vishay quality standards.
Product Description
Vishay FES8HT-E3/45 Silicon Junction Diode is a high-performance discrete semiconductor designed for ultrafast recovery switching applications.
This single diode supports a maximum forward current of 8 amperes and can withstand peak reverse repetitive voltages up to 500 volts, housed in a durable TO-220 through hole package.
It is engineered for applications requiring very low reverse recovery times of approximately 50 nanoseconds, enabling efficient high-frequency switching in power electronics including switched mode power supplies (SMPS), inverters, and motor drives.
The diode's maximum forward voltage drop of 1.5 volts helps minimize power dissipation and heating under load, contributing to system reliability. TO-220 package type ensures easy and secure mounting in electronic circuits.
Wide operating temperature range from -55 degrees Celsius to 150 degrees Celsius allows use in diverse environments. Peak non-repetitive surge current rating of 125 amperes accommodates transient spikes during operation.
Compact dimensions facilitate integration into various industrial and commercial electronic assemblies. Manufactured in China, ensuring conformity with Vishay's global quality standards and specifications. Ideal for industrial, laboratory, and manufacturing electronic power conversion applications.
For quality and product variety, explore the Discrete Semiconductors category on EnvMart to find Vishay components and complementary Switching Diodes suitable for your design and production needs.
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Frequently Asked Questions
The maximum forward current of this diode is 8 amperes.
It can withstand a peak reverse repetitive voltage of up to 500 volts.
The reverse recovery time is approximately 50 nanoseconds, allowing for efficient high-frequency switching.
The dimensions are 10.54 mm in length, 15.32 mm in height, and 4.7 mm in width.
The maximum forward voltage drop is 1.5 volts, which helps minimize power dissipation.
It operates reliably in a temperature range from -55°C to 150°C.
The peak non-repetitive forward surge current rating is 125 amperes.
This diode has a pin count of 2.
It is designed for through-hole mounting, which ensures secure installation in electronic circuits.
It is widely used in switched mode power supplies, inverters, and as a freewheeling diode.
It is classified as a silicon junction diode, specifically designed for ultrafast recovery switching applications.
It is manufactured in China under Vishay quality standards.
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