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onsemi Switching Diode Single Small Signal 200mA 70V SOT-23 Package MMBD6050LT1G

Category Switching Diode Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 1.01mm
Length 3.04mm
Model MMBD6050LT1G
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Sub Type Small Signal Diode
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Power Dissipation Pd 300mW
Diode Configuration Single
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 200mA
Maximum Peak Reverse Repetitive Voltage Vrrm 70V
Nexperia Silicon Junction, Single, 215 mA, 3-Pin 75 V SOT-23 MMBD4148,215Brand Nexperia
onsemi Switching Diode, Single, 200 mA, 3-Pin 70 V SOT-23 MMBD6050LT1GBrand onsemi

Key Features

  • Designed for high speed switching applications.
  • Maximum forward current of 200 milliamperes.
  • Maximum repetitive peak reverse voltage of 70 volts.
  • Low forward voltage drop of 1.25 volts maximum.
  • Maximum power dissipation rating of 300 milliwatts.
  • Extremely low minority carrier lifetime for fast switching.
  • Very low capacitance and low reverse leakage characteristics.
  • Operating temperature range from -55 to 150 degrees Celsius.

Product Description

onsemi MMBD6050LT1G is a high speed switching diode designed for electronic circuits requiring efficient and reliable signal switching with low losses.

This single small signal diode supports a maximum forward current of 200mA and can tolerate reverse voltages up to 70 volts. It comes housed in the industry-standard SOT-23 surface mount package, which measures 3.04mm in length, 1.4mm in width, and 1.01mm in height, making it ideal for compact and automated PCB assembly processes.

The diode's maximum forward voltage is 1.25V and it dissipates up to 300mW of power safely. Thanks to its extremely low minority carrier lifetime, it achieves very fast switching speeds and exhibits low capacitance as well as low reverse leakage, making it suitable for high frequency and fast digital signal applications.

Operating temperature ranges from -55°C to 150°C ensure robust performance under various environmental conditions. This diode is widely used in semiconductor circuits, power electronics, and switching devices across industrial, consumer electronics, telecommunications, and automotive sectors.

Designed for high speed switching applications. Maximum forward current of 200mA. Maximum peak reverse voltage of 70V. Low forward voltage drop of up to 1.25V. Maximum power dissipation of 300mW. Extremely low minority carrier lifetime for fast switching.

Very low capacitance and low reverse leakage currents. Operating temperature from -55 to 150 degrees Celsius. Compact SOT-23 surface mount package with 3 pins. Ideal for electronic semiconductors, power switching, and signal control circuits.

Explore more semiconductor Switching Diode options and components in the Electronics & Electricals category on EnvMart for your industrial, laboratory, and commercial applications.

onsemi Switching Diode Single Small Signal 200mA 70V SOT-23 Package MMBD6050LT1G
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Frequently Asked Questions

The maximum forward current of this diode is 200 milliamperes (mA).

It can tolerate a maximum repetitive peak reverse voltage of 70 volts (V).

The maximum forward voltage drop is 1.25 volts (V).

The maximum power dissipation rating is 300 milliwatts (mW).

The SOT-23 package measures 3.04mm in length, 1.4mm in width, and 1.01mm in height.

The operating temperature range is from -55°C to 150°C.

This diode is designed for surface mounting.

The peak reverse recovery time is 4 nanoseconds (ns).

This model is suitable for high-speed switching applications in semiconductor circuits and power electronics.

The SOT-23 package has 3 pins.

It exhibits very low capacitance and low reverse leakage characteristics, making it suitable for fast switching applications.

The brand of this diode is onsemi.

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