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Nexperia Silicon Junction Switching Diode 2-Pin SC-90 Package 300 V 250 mA BAS21J,115

Category Switching Diodes Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 0.8mm
Length 1.8mm
Model BAS21J,115
Width 1.35mm
Mount Type Surface
Series BAS21
Maximum Operating Temperature 150°C
Package Type SC-90
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Power Dissipation Pd 550mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 3A
Maximum Forward Voltage Vf 1.1V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 250mA
Maximum Peak Reverse Repetitive Voltage Vrrm 300V
onsemi 250 V 200 mA Diode General Purpose 2-Pin SOD-323Brand onsemi

Key Features

  • Single diode configuration designed for switching applications.
  • Maximum forward current of 250 mA for efficient current handling.
  • Surface mount device in compact SC-90 package.
  • Peak reverse repetitive voltage of 300 V enhances voltage tolerance.
  • Supports high-speed switching due to low peak reverse recovery time of 4 ns.
  • Operates within temperature range of -65°C to 150°C for versatility.
  • Low forward voltage of maximum 1.1 V minimizes power loss.
  • Power dissipation rated at 550 mW suiting small signal applications.

Product Description

Nexperia BAS21J,115 Silicon Junction Switching Diode is a compact and efficient discrete semiconductor designed for use in electronic circuits requiring a reliable switching diode. It features a single diode configuration with a maximum forward current of 250 mA and a peak reverse repetitive voltage rating of 300 V, making it suitable for various small signal switching applications.

This diode comes in a surface mount SC-90 package designed for high-density circuit boards and automated assembly processes. The device supports low leakage and high voltage characteristics, allowing it to perform well in demanding electrical environments with peak non-repetitive forward surge current capability of 3 A.

The diode exhibits a maximum forward voltage of 1.1 V and a peak reverse recovery time of just 4 ns, enabling high-speed switching ideal for signal processing and protection functions in telecommunication, instrumentation, and power supply circuits.

Operating temperature ranges from -65°C to 150°C ensure suitability for a wide spectrum of industrial, commercial, and consumer electronic applications. The physical dimensions of 1.8 mm length, 1.35 mm width, and 0.8 mm height facilitate compact PCB footprint integration.

The product series BAS21 from Nexperia is manufactured in China with adherence to quality standards. It is sold as a new item, packaged and supplied on reels for optimized production efficiency in SMT assembly.

Single diode configuration designed for switching applications. Maximum forward current of 250 mA for efficient current handling. Surface mount device in compact SC-90 package. Peak reverse repetitive voltage of 300 V enhances voltage tolerance.

Supports high-speed switching due to low peak reverse recovery time of 4 ns. Operates within temperature range of -65°C to 150°C for versatility. Low forward voltage of maximum 1.1 V minimizes power loss. Power dissipation rated at 550 mW suiting small signal applications.

Compact physical dimensions: 1.8 mm length, 1.35 mm width, 0.8 mm height. Manufactured in China ensuring quality control with new product condition.

This switching diode is ideal for industrial and commercial electronic designs, electronic instrumentation, telecommunications equipment, and power management circuits. It supports customized high-density circuit layouts and is compliant with surface mount technology standards, enhancing reliability and ease of manufacturing.

Explore more high-quality Switching Diodes from Nexperia and related semiconductor products on EnvMart for your electronics development and production needs.

Nexperia Silicon Junction Switching Diode 2-Pin SC-90 Package 300 V 250 mA BAS21J,115
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Frequently Asked Questions

The maximum forward current for the BAS21J,115 is 250 mA, allowing efficient current handling in various applications.

This model has a peak reverse repetitive voltage rating of 300 V, enhancing its voltage tolerance in circuits.

The dimensions of the SC-90 package are 1.8 mm in length, 1.35 mm in width, and 0.8 mm in height, facilitating compact PCB integration.

The peak reverse recovery time is 4 ns, which supports high-speed switching applications.

The power dissipation rating for this diode is 550 mW, suitable for small signal applications.

It operates within a temperature range of -65°C to 150°C, making it suitable for various industrial and commercial applications.

This diode is designed as a surface mount device, which is ideal for high-density circuit boards.

The maximum forward voltage is 1.1 V, which helps minimize power loss during operation.

The peak non-repetitive forward surge current capability is 3 A, allowing it to handle brief surges effectively.

This switching diode is suitable for applications in telecommunications, instrumentation, and power supply circuits.

The BAS21J,115 has a pin count of 2, consistent with its single diode configuration.

This diode is manufactured in China, adhering to quality standards for semiconductor products.

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