$13.63
$13.22
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
onsemi SuperFET II N-Channel MOSFET 77 A, 600 V Enhancement Mode, 3-Pin TO-247 FCH041N60E
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | FCH041N60E |
| Width | 4.82mm |
| Mount Type | Through Hole |
| Series | SuperFET II |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 77A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 41mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 592W |
| Typical Gate Charge Qg @ Vgs | 285nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.2V |
Key Features
- High continuous drain current of 77 amperes for robust power handling.
- Rated for maximum drain-source voltage of 600 volts.
- Features low drain-source resistance of 41 milliohms for efficiency.
- Supports enhancement mode operation for switching applications.
- Compact TO-247 package suitable for through-hole mounting.
- Can operate at temperatures ranging from -55 °C to 150 °C.
- High power dissipation capability of up to 592 watts.
- Typical gate charge of 285 nanocoulombs for efficient switching performance.
Product Description
onsemi FCH041N60E is a high-performance SuperFET II N-Channel MOSFET designed for demanding power electronics applications. It delivers a maximum continuous drain current of 77 amperes and withstands drain-source voltages up to 600 volts, making it ideal for high power density circuits.
The device is housed in a 3-pin TO-247 package, facilitating easy through-hole mounting in industrial power supplies, server power modules, telecom, computing, UPS/ESS systems, solar inverters, and lighting controls.
Utilizing advanced Super Junction technology, this MOSFET offers low on-resistance (41 milliohms) and superior body diode performance, contributing to higher efficiency and reliability in switching power supplies.
Operating temperature range from -55 °C to 150 °C and a maximum power dissipation of 592 watts enables robust performance under challenging thermal conditions. The typical gate charge of 285 nanocoulombs allows for efficient high-speed switching, while the gate-source voltage rating (-30 V to +30 V) offers device protection and flexibility.
High continuous drain current of 77 amperes for reliable power handling. Low drain-source resistance ensures reduced conduction losses. Robust power dissipation rating suitable for demanding applications. Wide operating temperature range ensures suitability for industrial environments.
SuperFET II technology optimizes efficiency and reliability. Compact TO-247 package facilitates installation and heat dissipation. Typical gate charge supports fast switching operations. Forward voltage of 1.2 volts reduces energy loss during conduction.
This MOSFET is well-suited for use in industrial power supplies, solar inverters, uninterruptible power supplies (UPS), server and telecom power modules, and other applications requiring efficient high-current switching devices.
Explore onsemi high-voltage MOSFETs and other semiconductor devices on EnvMart for advanced electronic design solutions.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current of this model is 77 amperes, allowing for robust power handling in various applications.
This MOSFET is rated for a maximum drain-source voltage of 600 volts, making it suitable for high power density circuits.
It features a low drain-source resistance of 41 milliohms, which contributes to improved efficiency in power applications.
The operating temperature range for this model is from -55 °C to 150 °C, allowing it to function in challenging thermal conditions.
It is housed in a compact TO-247 package, which facilitates through-hole mounting in various applications.
This model has a maximum power dissipation capability of 592 watts, suitable for demanding power applications.
The typical gate charge for this MOSFET is 285 nanocoulombs, which supports efficient high-speed switching performance.
The forward voltage drop is rated at 1.2 volts, which helps reduce energy loss during conduction.
This MOSFET has a pin count of 3, which is standard for its TO-247 package type.
It is an N-channel enhancement mode MOSFET, designed for efficient switching applications.
This model is suitable for use in industrial power supplies, solar inverters, uninterruptible power supplies (UPS), and server power modules.
The maximum gate-source voltage rating for this unit is -30 V to +30 V, providing flexibility and protection for the device.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$6.78
$6.57
-3%
New
$23.16
$20.22
-12.7%
Recently Viewed Products
$13.63
$13.22
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent