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onsemi QFET Type P-Channel MOSFET 1.33 A 500 V Enhancement 3-Pin TO-252 FQD3P50TM
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | FQD3P50TM |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.33A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 4.9Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 50W |
| Typical Gate Charge Qg @ Vgs | 18nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -5V |
Key Features
- Type P channel enhancement mode MOSFET transistor for efficient power control.
- Maximum continuous drain current of 1.33 amperes for reliable operation.
- High voltage handling capability with 500 volts maximum drain-source voltage.
- Compact TO-252 surface mount package with 3 pins for easy PCB integration.
- Low on-resistance of 4.9 ohms ensures reduced power loss.
- Maximum power dissipation rated at 50 watts for thermal reliability.
- Operating temperature range from -55°C up to 150°C for extended environment tolerance.
- Typical gate charge of 18 nanocoulombs at Vgs for fast switching performance.
Product Description
onsemi FQD3P50TM is a high-performance QFET® Type P-Channel MOSFET designed for power management and switching in electronic circuits. It features a maximum continuous drain current of 1.33 A and can withstand voltages up to 500 V between drain and source, making it suitable for robust power supply and converter applications.
This device incorporates an enhancement mode channel within a compact TO-252 package that facilitates surface mounting and efficient heat dissipation. The MOSFET provides low on-resistance (4.9 Ω) and low gate charge (18 nC), reducing conduction losses and improving switching efficiency.
The operating temperature range is wide, from -55°C minimum to a maximum of 150°C, ensuring reliability under harsh industrial and commercial conditions. The device is engineered to handle a maximum power dissipation of 50 W, suitable for power factor correction, DC-DC converters, motion controls, lighting ballasts, and plasma display panel drives.
The FQD3P50TM supports gate-source voltages up to ±30 V and has a forward voltage drop of -5 V, making it well-suited for various drive voltages and switching topologies. Its physical footprint of 6.73 mm length by 6.22 mm width and 2.39 mm height facilitates compact PCB designs.
Type P channel enhancement mode MOSFET for power electronics. 1.33 A maximum continuous drain current capacity. Can withstand 500 V maximum drain to source voltage. Compact TO-252 surface mount package with 3-pin configuration.
Low on-resistance minimizes conduction losses. Thermally rated for up to 50 W power dissipation. Wide operating temperature range from -55°C to 150°C. Typical gate charge of 18 nC supports fast switching. Maximum gate-source voltage ±30 V accommodates various gate drives.
Physical dimensions facilitate integration into power circuits.
This onsemi QFET MOSFET is widely used in industrial, automotive, and power supply electronics, particularly where efficient switching and thermal performance are critical. It complements a broad family of power MOSFETs from onsemi, providing designers with reliable, compact power control solutions.
Explore more power semiconductors and discrete electronics in the Electronics & Electricals category at EnvMart to find complementary components and power management devices.
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Frequently Asked Questions
The maximum continuous drain current of this model is 1.33 A.
It can withstand a maximum drain-source voltage of 500 V.
The on-resistance is rated at 4.9 ohms, which helps reduce conduction losses.
The typical gate charge is 18 nanocoulombs at Vgs, supporting fast switching performance.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
The operating temperature range is from -55°C to 150°C, allowing for use in various environments.
The maximum power dissipation is rated at 50 watts, ensuring thermal reliability.
This model supports surface mounting, facilitating easy integration into PCBs.
The maximum gate-source voltage is ±30 V, accommodating various gate drive requirements.
It is suitable for power factor correction, DC-DC converters, motion controls, and lighting ballasts.
This model features a Type P channel enhancement mode, designed for efficient power management.
The country of origin for this MOSFET is India.
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