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onsemi PowerTrench N-Channel MOSFET 11.4A 150V Enhancement 3-Pin TO-252 FDD770N15A
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | FDD770N15A |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11.4A |
| Maximum Drain Source Voltage Vds | 150V |
| Maximum Drain Source Resistance Rds | 77mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 56.8W |
| Typical Gate Charge Qg @ Vgs | 8.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.25V |
Key Features
- Maximum continuous drain current of 11.4 amperes supports substantial power loads.
- Rated for a maximum drain-source voltage of 150 volts ensuring robust operation.
- Features a surface mount TO-252 package with 3 pins for compact integration.
- Enhancement mode operation provides controlled channel conduction.
- Low maximum drain-source resistance of 77 milliohms reduces power losses.
- Fast typical gate charge of 8.4 nanocoulombs enables swift switching performance.
- Supports a maximum power dissipation of 56.8 watts for thermal reliability.
- Operates reliably between -55°C minimum and 150°C maximum temperatures.
Product Description
The onsemi FDD770N15A PowerTrench N-Channel MOSFET is a robust and efficient device engineered for a wide range of electronics applications, particularly in power management circuits and switching regulators. It supports a continuous drain current of 11.4A and withstands a maximum drain-source voltage of 150V, making it suitable for demanding industrial, automotive, and consumer electronics contexts.
This MOSFET features an enhancement mode channel, allowing precise control over conduction with a low on-resistance of 77 milliohms in its TO-252 surface mount package, which contains 3 pins for practical PCB layout and mounting.
The device maintains high performance with a maximum power dissipation of 56.8W and a typical gate charge of 8.4nC, enabling fast switching speeds crucial for efficient power conversion and switching applications. Its operating temperature range from -55°C to 150°C ensures durability in harsh environments.
The maximum gate-source voltage rating of ±20V provides sufficient margin for safe operation, while the 1.25V forward voltage supports efficient current flow minimizing losses. This MOSFET is a reliable choice for electronics manufacturing, power supply design, renewable energy systems, and automotive electronics.
Maximum continuous drain current of 11.4 amperes supports substantial power loads. Rated for maximum drain-source voltage of 150 volts ensures robust operation. Surface mount TO-252 package with 3 pins for compact integration.
Enhancement mode channel provides controlled conduction. Low maximum drain-source resistance reduces power losses. Fast typical gate charge enables swift switching. Maximum power dissipation supports thermal reliability.
Wide operating temperature range from -55°C to 150°C. Maximum gate-source voltage rating of ±20 volts. Forward voltage drop of 1.25 volts contributes to efficient conduction. Explore more high-quality semiconductor components and Power MOSFETs in the Electronics & Electricals category on EnvMart for your industrial, laboratory, and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11.4 amperes, which supports substantial power loads.
It is rated for a maximum drain-source voltage of 150 volts, ensuring robust operation in various applications.
This MOSFET features a TO-252 surface mount package with 3 pins for compact integration.
The maximum power dissipation supported by this device is 56.8 watts, which contributes to its thermal reliability.
It has a typical gate charge of 8.4 nanocoulombs, enabling swift switching performance.
This model operates reliably between -55°C and 150°C, making it suitable for harsh environments.
The maximum gate-source voltage rating is ±20 volts, providing a sufficient margin for safe operation.
The forward voltage drop is 1.25 volts, which contributes to efficient current flow and minimizes losses.
It features an enhancement mode channel, allowing for controlled conduction.
The maximum drain-source resistance for this model is 77 milliohms, which helps reduce power losses during operation.
The dimensions of this MOSFET are 6.73mm in length, 6.22mm in width, and 2.39mm in height.
It is suitable for a wide range of electronics applications, particularly in power management circuits and switching regulators.
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