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onsemi UltraFET N-Channel MOSFET 75 A 80 V Enhancement 3-Pin TO-220 HUF75645P3
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.3mm |
| Length | 10.67mm |
| Model | HUF75645P3 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | UltraFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 75A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 10mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 270W |
| Typical Gate Charge Qg @ Vgs | 195nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.25V |
Key Features
- Designed for high efficiency power conversion applications.
- Features UltraFET Trench technology with low RDS(on) of 10 milliohms.
- Supports a maximum continuous drain current of 75 A.
- Maximum drain-source voltage rating of 80 V ensures robust operation.
- Capable of handling power dissipation up to 270 W.
- Operates within a temperature range from -55°C to 175°C.
- Typical gate charge is low at 195 nC, suitable for high frequency switching.
- Includes a forward voltage drop of 1.25 V for efficient conduction.
Product Description
onsemi HUF75645P3 is an UltraFET N-Channel MOSFET with a maximum continuous drain current of 75 A and a maximum drain-source voltage of 80 V. Packaged in a 3-pin TO-220 through-hole mount, this device is engineered for high efficiency power conversion, switching regulators, and motor driver applications.
The UltraFET® Trench MOSFET technology allows for benchmark efficiency in power management applications, exhibiting low RDS(on) resistance at 10 milliohms and optimized low gate charge of 195 nC. It withstands high avalanche energy and features a diode with very low reverse recovery time and stored charge.
This MOSFET supports a maximum power dissipation of 270 W and operates reliably across the wide temperature range from -55°C to 175°C, making it suitable for industrial and commercial power electronics.
Typical applications include high frequency DC to DC converters, motor drivers, low-voltage bus switches, and efficient power management circuits where fast switching and low conduction losses are critical.
Physically, the device measures 16.3 mm in height, 10.67 mm in length, and 4.7 mm in width, designed for through-hole mounting for ease of installation. The forward voltage is 1.25 V, optimizing conduction efficiency, and the gate-source voltage rating ranges from -20 V to +20 V.
Designed for power conversion and switching regulator circuits. Low RDS(on) and gate charge enhance switching speed and efficiency. Robust thermal performance with operating temperatures from -55°C to 175°C. TO-220 package ensures compatibility with standard through-hole PCB mounting.
Supports high current handling and power dissipation suitable for demanding electronic systems.
onsemi brand components are recognized for quality and reliability in industrial and electronic component markets. Explore the Semiconductor category at EnvMart for more onstate-of-the-art discrete semiconductor devices from leading manufacturers.
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Frequently Asked Questions
The maximum continuous drain current for this model is 75 A.
It has a maximum drain-source voltage rating of 80 V.
The RDS(on) resistance is 10 milliohms, which contributes to its efficiency in power management applications.
The typical gate charge is 195 nC, making it suitable for high frequency switching applications.
It can handle a maximum power dissipation of up to 270 W.
The dimensions are 16.3 mm in height, 10.67 mm in length, and 4.7 mm in width.
It operates within a temperature range from -55°C to 175°C.
This model is designed for through-hole mounting.
The forward voltage drop is 1.25 V, which enhances conduction efficiency.
The gate-source voltage rating ranges from -20 V to +20 V.
It is suitable for high frequency DC to DC converters, motor drivers, and efficient power management circuits.
This model features UltraFET Trench technology for high efficiency in power conversion applications.
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