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onsemi N-Channel IGBT 35 A 1200 V TO-263 Surface Mount 3-Pin HGT1S10N120BNST
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Model | HGT1S10N120BNST |
| Mount Type | Surface |
| Series | NPT |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 35A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.45V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 298W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Key Features
- This IGBT features a TO-263 package suitable for surface mounting.
- It has a maximum power dissipation of 298 W, ensuring robust thermal performance.
- Operates reliably in temperature ranges from -55°C to 150°C.
- Designed with a gate emitter voltage tolerance of ±20 V and maximum saturation voltage of 2.45 V.
- Complies with RoHS standards and belongs to the NPT series.
- The three-pin design facilitates easy integration in electronic circuits.
- This IGBT combines the fast switching characteristics of MOSFETs with low saturation voltage of bipolar transistors.
- Ideal for industrial, power electronics, and energy management applications.
Product Description
onsemi HGT1S10N120BNST is an N-Channel Insulated Gate Bipolar Transistor (IGBT) that offers a maximum continuous collector current of 35 A and is rated for a maximum collector-emitter voltage of 1200 V. Packaged in a TO-263 surface mount package with a 3-pin configuration, this device ensures efficient power handling and ease of use in various electronic systems.
The device excels in power dissipation up to 298 W, allowing it to handle demanding load conditions. It is designed to operate across a wide temperature range from -55°C to 150°C, making it suitable for harsh industrial environments. The maximum gate-emitter voltage of ±20 V and collector-emitter saturation voltage of 2.45 V provide robust control and efficient conduction.
Compliant with RoHS standards, the HGT1S10N120BNST is part of the NPT series and does not meet automotive standards but is ideal for general electronic and power semiconductor applications. This IGBT combines high efficiency with fast switching speeds, integrating an insulated gate FET for input control and a bipolar power transistor switch.
Applications include industrial electronics, power supplies, motor drives, renewable energy converters, and other power management systems requiring reliable and efficient switching components. The TO-263 package type facilitates surface mounting, enhancing design flexibility and board space optimization.
This IGBT features a TO-263 package suitable for surface mounting. It has a maximum power dissipation of 298 W, ensuring robust thermal performance. Operates reliably in temperature ranges from -55°C to 150°C. Designed with a gate emitter voltage tolerance of ±20 V and maximum saturation voltage of 2.45 V.
Complies with RoHS standards and belongs to the NPT series. The three-pin design facilitates easy integration in electronic circuits. This IGBT combines the fast switching characteristics of MOSFETs with low saturation voltage of bipolar transistors.
Ideal for industrial, power electronics, and energy management applications. Explore the comprehensive range of semiconductor devices and related electronic components at EnvMart for robust, efficient, and industry-standard products.
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Frequently Asked Questions
The maximum continuous collector current for the HGT1S10N120BNST is 35 A.
This IGBT has a maximum collector-emitter voltage rating of 1200 V.
It can handle a maximum power dissipation of 298 W.
The operating temperature range for this model is from -55°C to 150°C.
The maximum gate-emitter voltage tolerance is ±20 V.
The maximum collector-emitter saturation voltage for this IGBT is 2.45 V.
It is packaged in a TO-263 surface mount package with a 3-pin configuration.
Yes, it complies with RoHS standards.
It is suitable for industrial electronics, power supplies, motor drives, and renewable energy converters.
This model belongs to the NPT series.
The HGT1S10N120BNST is manufactured in India.
Its three-pin design facilitates easy integration in electronic circuits, combining fast switching characteristics with low saturation voltage.
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