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onsemi QFET Type P-Channel MOSFET 19 A, 60 V Enhancement 3-Pin TO-220 FQPF27P06

Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 16.3mm
Length 10.67mm
Model FQPF27P06
Width 4.7mm
Mount Type Through Hole
Series QFET
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 19A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 70mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 120W
Typical Gate Charge Qg @ Vgs 33nC
Maximum Gate Source Voltage Vgs -25, +25V
Forward Voltage Vf -4V

Key Features

  • Maximum continuous drain current of 19 A ensures robust performance.
  • Maximum drain-source voltage of 60 V suitable for diverse applications.
  • Low drain-source resistance of 70mΩ reduces power loss.
  • Enhancement channel mode provides efficient switching operation.
  • Through-hole mount type with a 3-pin TO-220 package.
  • Maximum power dissipation of 120 W supports high power applications.
  • Wide operating temperature range from -55°C to 175°C.
  • Typical gate charge of 33 nC enhances switching efficiency.

Product Description

onsemi FQPF27P06 QFET Type P-Channel MOSFET is designed for power electronic applications requiring efficient switching and high current handling capability. Featuring a maximum continuous drain current of 19 A and a maximum drain-source voltage of 60 V, this device is ideal for power supplies, power factor correction circuits, DC-DC converters, lighting ballasts, and motion control systems.

The device's enhancement mode channel offers reduced on-state losses due to its low on-resistance of 70mΩ, and switching losses are minimized with its optimized gate charge of 33 nC. Packaged in a durable TO-220 through-hole mount with three pins, it ensures easy integration into standard PCB designs.

Its maximum power dissipation of 120 W allows it to handle demanding load conditions, while its wide operating temperature range from -55°C to 175°C ensures reliable performance in harsh industrial and commercial environments. The device's gate can withstand voltages from -25 V to +25 V, providing stable gate control without risk of damage.

Physical dimensions of the MOSFET are compact with a height of 16.3 mm, length of 10.67 mm, and width of 4.7 mm, making it suitable for space-constrained designs. It has not been certified to automotive standards but meets general industrial requirements.

Maximum continuous drain current of 19 A ensures robust performance. Maximum drain-source voltage of 60 V suitable for diverse applications. Low drain-source resistance of 70mΩ reduces power loss. Enhancement channel mode provides efficient switching operation.

Through-hole mount type with a 3-pin TO-220 package. Maximum power dissipation of 120 W supports high power applications. Wide operating temperature range from -55°C to 175°C. Typical gate charge of 33 nC enhances switching efficiency.

Maximum gate-source voltage of -25 to +25 V for reliable gate control. Compact dimensions: Height 16.3 mm, Length 10.67 mm, Width 4.7 mm.

This MOSFET is well-suited for industrial, laboratory, manufacturing, and power management applications. It is an essential component in electronic circuits where efficient power switching and management are critical.

Explore more semiconductor and MOSFET solutions in the Electronics & Electricals category at EnvMart.

Explore more products in our Power MOSFET category.

onsemi QFET Type P-Channel MOSFET 19 A, 60 V Enhancement 3-Pin TO-220 FQPF27P06
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Frequently Asked Questions

The maximum continuous drain current of this model is 19 A, ensuring robust performance for power electronic applications.

This MOSFET can handle a maximum drain-source voltage of 60 V, making it suitable for diverse applications.

It features a low drain-source resistance of 70 mΩ, which helps reduce power loss during operation.

The FQPF27P06 is packaged in a TO-220 type with a through-hole mount, allowing for easy integration into PCB designs.

This MOSFET supports a maximum power dissipation of 120 W, suitable for high power applications.

It operates within a wide temperature range from -55°C to 175°C, ensuring reliable performance in various environments.

The typical gate charge is 33 nC, which enhances switching efficiency during operation.

The dimensions are 16.3 mm in height, 10.67 mm in length, and 4.7 mm in width, making it compact for space-constrained designs.

The maximum gate-source voltage is -25 V to +25 V, providing stable gate control without risk of damage.

This model is ideal for applications such as power supplies, power factor correction circuits, DC-DC converters, and motion control systems.

It utilizes an enhancement mode channel type, which provides efficient switching operation and reduced on-state losses.

This MOSFET has a pin count of 3, which is standard for its TO-220 package type.

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