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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.3mm |
| Length | 10.67mm |
| Model | FQPF27P06 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 19A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 70mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 120W |
| Typical Gate Charge Qg @ Vgs | 33nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -4V |
onsemi FQPF27P06 QFET Type P-Channel MOSFET is designed for power electronic applications requiring efficient switching and high current handling capability. Featuring a maximum continuous drain current of 19 A and a maximum drain-source voltage of 60 V, this device is ideal for power supplies, power factor correction circuits, DC-DC converters, lighting ballasts, and motion control systems.
The device's enhancement mode channel offers reduced on-state losses due to its low on-resistance of 70mΩ, and switching losses are minimized with its optimized gate charge of 33 nC. Packaged in a durable TO-220 through-hole mount with three pins, it ensures easy integration into standard PCB designs.
Its maximum power dissipation of 120 W allows it to handle demanding load conditions, while its wide operating temperature range from -55°C to 175°C ensures reliable performance in harsh industrial and commercial environments. The device's gate can withstand voltages from -25 V to +25 V, providing stable gate control without risk of damage.
Physical dimensions of the MOSFET are compact with a height of 16.3 mm, length of 10.67 mm, and width of 4.7 mm, making it suitable for space-constrained designs. It has not been certified to automotive standards but meets general industrial requirements.
Maximum continuous drain current of 19 A ensures robust performance. Maximum drain-source voltage of 60 V suitable for diverse applications. Low drain-source resistance of 70mΩ reduces power loss. Enhancement channel mode provides efficient switching operation.
Through-hole mount type with a 3-pin TO-220 package. Maximum power dissipation of 120 W supports high power applications. Wide operating temperature range from -55°C to 175°C. Typical gate charge of 33 nC enhances switching efficiency.
Maximum gate-source voltage of -25 to +25 V for reliable gate control. Compact dimensions: Height 16.3 mm, Length 10.67 mm, Width 4.7 mm.
This MOSFET is well-suited for industrial, laboratory, manufacturing, and power management applications. It is an essential component in electronic circuits where efficient power switching and management are critical.
Explore more semiconductor and MOSFET solutions in the Electronics & Electricals category at EnvMart.
Explore more products in our Power MOSFET category.
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