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onsemi Single Type P-Channel JFET-Channel JFET, 15 V -2 to -25 mA, 3-Pin SOT-23 MMBFJ176

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onsemi Single Type P-Channel JFET-Channel JFET, 15 V -2 to -25 mA, 3-Pin SOT-23 MMBFJ176

Name: onsemi Single Type P-Channel JFET-Channel JFET, 15 V -2 to -25 mA, 3-Pin SOT-23 MMBFJ176
Brand: onsemi
SKU: 242581
Price: 0.27 USD
Availability: InStock

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Category Discrete Semiconductor Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	0.93mm
Length	2.92mm
Model	MMBFJ176
Width	1.3mm
Mount Type	Surface
Configuration	Single
Maximum Operating Temperature	150°C
Package Type	SOT-23
Sub Type	JFET
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Drain Source Voltage Vds	15V
Maximum Drain Source Resistance Rds	250Ω
Maximum Power Dissipation Pd	225mW
Maximum Gate Source Voltage Vgs	30V
Drain Source Current Ids	-2 to -25 mA

Key Features

Reliable single type P-Channel junction field-effect transistor (JFET).
Compact 3-pin SOT-23 surface mount package design.
Maximum power dissipation rated at 225 mW for stable operation.
Wide operating temperature range from -55°C up to 150°C.
Drain-source resistance of 250 Ω ensures efficient control.
Maximum gate-source voltage of 30 V supports robust electrical performance.
Small form factor with dimensions of 2.92mm length, 1.3mm width, and 0.93mm height.
Ideal for discrete semiconductor applications in electronics and industrial equipment.

Product Description

onsemi MMBFJ176 is a high-performance Single Type P-Channel Junction Field Effect Transistor (JFET) designed for Discrete Semiconductor applications. It features a 3-pin SOT-23 surface mount package ideal for compact circuit designs and low power dissipation needs.

This JFET supports a maximum drain-source voltage (Vds) of 15 V and a drain-source current (Ids) ranging from -2 to -25 mA, making it suitable for precise control in electronic switching and amplification.

With a maximum power dissipation (Pd) of 225 mW and an operating temperature range from -55°C to 150°C, the MMBFJ176 ensures reliable performance even in demanding industrial, automotive, and commercial electronics environments.

Its low drain-source resistance (Rds) of 250 Ω and maximum gate-source voltage (Vgs) of 30 V provide enhanced electrical characteristics, reducing signal losses and improving efficiency in sensitive electronic applications.

The compact dimensions of 2.92mm length, 1.3mm width, and 0.93mm height facilitate usage in space-constrained PCB layouts, allowing seamless integration into modern electronic assemblies.

This transistor is well-suited for industrial equipment, instrumentation, and electronic component manufacturing requiring high quality, robust semiconductor devices. Reliable single type P-Channel junction field-effect transistor (JFET).

Compact 3-pin SOT-23 surface mount package design. Maximum power dissipation rating of 225 mW. Wide operating temperature range: -55°C to 150°C. Maximum drain-source voltage: 15 V. Drain-source current range: -2 to -25 mA.

Maximum gate-source voltage up to 30 V. Low drain-source resistance of 250 Ω. Small size: 2.92 mm × 1.3 mm × 0.93 mm.

The onsemi MMBFJ176 is a trusted solution for high-performance electronics manufacturing, laboratory prototyping, and commercial electronics requiring discrete P-Channel JFETs. Explore the Electronics & Electricals and Semiconductor categories on EnvMart for a wide range of complementary components and solutions.