onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 6.5 A, 20 V Enhancement, 8-Pin SOIC FDS9934C

The onsemi FDS9934C Isolated PowerTrench 2 Type P, Type N-Channel MOSFET is a dual N- and P-Channel transistor optimized for power switching applications. It supports a maximum continuous drain current of 6.5 A and a maximum drain-source voltage of 20 V, housed in a compact 8-Pin SOIC surface mount package.

This device uses an enhancement mode channel which offers superior switching performance. Its maximum drain-source resistance of 90 mΩ minimizes conduction losses, enhancing system efficiency.

The MOSFET delivers a maximum power dissipation rating of 2 W and operates reliably in a temperature range from -55°C up to 150°C, making it suitable for demanding industrial and commercial applications.

Compact physical dimensions of 4.9 mm length, 3.9 mm width, and 1.575 mm height contribute to space-saving electronic board layouts. The device has a typical gate charge of 6.2 nC at specified gate voltages, providing fast switching suitable for synchronous rectification in AC/DC power supplies.

The transistor configuration is isolated, enhancing electrical isolation between transistor elements which improves system robustness. It features a maximum gate-source voltage rating of ±12 V to protect the gate from voltage spikes.

The FDS9934C includes two elements per chip, combining both N-Channel and P-Channel MOSFETs in a single package to simplify circuit design and enhance versatility. This MOSFET is utilized in industrial electronics, power supply design, automotive applications, and various consumer electronic devices that require efficient power management.

This MOSFET features an enhancement channel mode for efficient switching. Maximum power dissipation is rated at 2 W, suitable for low power applications. It has a maximum drain-source resistance of 90 milliohms for reduced power loss.

Operating temperature ranges from -55°C to 150°C for reliable performance. Compact dimensions of 4.9 mm length, 3.9 mm width, and 1.575 mm height enable flexible PCB design. The device supports a maximum gate source voltage of ±12 V for safe operation.

Typical gate charge of 6.2 nC ensures fast switching in power supply circuits. Isolated transistor configuration promotes better electrical isolation in circuits. Contains 2 elements per chip for combined N-Channel and P-Channel functionality.

Surface mount SOIC package eases automated assembly in electronic manufacturing. Explore our extensive range of MOSFETs and power semiconductors for industrial, commercial, and automotive electronics at EnvMart.