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onsemi PowerTrench N-Channel MOSFET, 193A, 60V Enhancement Mode, 3-Pin TO-220 Package FDP030N06
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 15.38mm |
| Length | 10.1mm |
| Model | FDP030N06 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 193A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 3.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 231W |
| Typical Gate Charge Qg @ Vgs | 116nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- The device is housed in a 3-pin TO-220 package suitable for through-hole mounting.
- It features a low maximum drain-source resistance of 3.2 milliohms for efficient conduction.
- The maximum power dissipation is rated at 231 watts supporting robust thermal performance.
- Operating temperature ranges from -55°C to a maximum of 175°C ensuring reliability in varied environments.
- Typical gate charge is 116 nanocoulombs measured at gate-source voltage.
- The MOSFET has a maximum gate-source voltage tolerance of -20 to +20 volts.
- Forward voltage drop is approximately 1.3 volts during conduction.
- Dimensionally, it measures 15.38 mm height, 10.1 mm length, and 4.7 mm width.
Product Description
onsemi FDP030N06 is a PowerTrench N-Channel MOSFET designed for high current and moderate voltage applications. Featuring a maximum continuous drain current of 193 amperes and a maximum drain-source voltage of 60 volts, this enhancement mode transistor is enclosed in a durable 3-pin TO-220 through-hole package.
This device offers a low Rds(on) of 3.2 milliohms, enabling efficient power management with minimal conduction losses. It supports a maximum power dissipation of 231 watts, which allows it to perform reliably under demanding thermal loads. The specified operating temperature range from -55°C to 175°C makes it suitable for industrial, automotive, and power supply applications.
With a typical gate charge of 116 nanocoulombs and gate-source voltage range of -20 to +20 volts, the FDP030N06 provides precise control suitable for switching and amplification functions in power electronics. Forward voltage drop is rated at 1.3 volts, balancing performance and efficiency.
Physical dimensions of 15.38 mm height, 10.1 mm length, and 4.7 mm width make this device compact for integration into various circuits. The transistor’s N-channel, enhancement mode operation allows for effective and rapid switching.
The PowerTrench technology ensures low conduction losses and fast switching speeds. Typical uses include power converters, motor drives, and load switching applications. The TO-220 package facilitates easy mounting and heatsinking for thermal management.
Robust thermal and electrical characteristics support use in harsh environments. Suitable for industrial, automotive, and power management system designs.
This onsemi MOSFET model FDP030N06 is an ideal choice for engineers requiring a high current, medium voltage transistor with reliable performance. Browse the Electronics & Electricals category at EnvMart for a wide selection of power semiconductor devices and related components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 193 amperes.
The maximum drain-source voltage rating is 60 volts.
It measures 15.38 mm in height, 10.1 mm in length, and 4.7 mm in width.
This model is housed in a 3-pin TO-220 package suitable for through-hole mounting.
The maximum power dissipation is rated at 231 watts.
The operating temperature ranges from -55°C to a maximum of 175°C.
The typical gate charge is 116 nanocoulombs measured at gate-source voltage.
The maximum gate-source voltage tolerance is -20 to +20 volts.
The forward voltage drop is approximately 1.3 volts during conduction.
It features a low maximum drain-source resistance of 3.2 milliohms for efficient conduction.
This model uses an N-channel enhancement mode for effective and rapid switching.
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