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onsemi UltraFET N-Channel MOSFET, 18 A, 60 V Enhancement Mode, 3-Pin TO-252 Package RFD12N06RLESM9A
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | RFD12N06RLESM9A |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | UltraFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 75mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 49W |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
Key Features
- Capable of handling a maximum continuous drain current of 18 amperes.
- Maximum drain-source voltage rating of 60 volts ensures suitability for moderate voltage applications.
- Equipped with a TO-252 package, ideal for surface mounting and efficient thermal management.
- Features a low maximum drain-source resistance of 75 milliohms for improved efficiency.
- High maximum power dissipation rating of 49 watts supports robust operation.
- Operates efficiently between minimum temperature of -55°C and maximum of 175°C.
- Optimized for high frequency applications with a typical gate charge of 12 nanocoulombs at Vgs.
- Designed with enhancement mode channel ensuring precise control in switching circuits.
Product Description
onsemi RFD12N06RLESM9A UltraFET N-Channel MOSFET is a high-performance discrete semiconductor component optimized for power conversion and switching applications in industrial and commercial electronic circuits.
This device features a maximum continuous drain current of 18 A and a maximum drain-source voltage (Vds) of 60 V, making it fit for use in DC-DC converters, motor drivers, low-voltage bus switches, and power management systems.
Its TO-252 surface-mount package allows for efficient installation and heat dissipation, while the low drain-source resistance (75 mΩ) minimizes conduction losses, improving overall system efficiency. The MOSFET boasts a maximum power dissipation of 49 W, enabling it to handle substantial power loads in demanding environments.
This enhancement mode MOSFET exhibits a typical gate charge of 12 nC at Vgs, contributing to its excellent switching performance at high frequencies. It operates reliably in a wide temperature range from -55°C up to 175°C, suitable for harsh industrial conditions.
Compact form factor dimensions of 6.73 mm length, 6.22 mm width, and 2.39 mm height facilitate integration into printed circuit boards while maintaining high reliability and performance.
Maximum continuous drain current of 18 A ensures robust current handling. TO-252 package supports surface mount applications with good thermal performance. Low Rds(on) of 75 milliohms reduces conduction losses. Wide operating temperature range from -55°C to 175°C suits industrial environments.
Enhancement mode operation provides precise gate control. Typical gate charge of 12 nC optimizes switching speed. Maximum power dissipation of 49 W enables handling of substantial heat. Safe maximum gate-source voltages between -16 and +16 V prevent damage.
Compact dimensions allow easy PCB integration. This MOSFET is ideal for use in industrial, commercial, and electronic power management systems, including high-frequency DC to DC converters and motor control applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 18 A.
This MOSFET has a maximum drain-source voltage rating of 60 V.
It is packaged in a TO-252 surface-mount configuration, which is ideal for efficient thermal management.
The maximum power dissipation rating for this model is 49 W, allowing it to handle substantial power loads.
The typical gate charge at Vgs for this MOSFET is 12 nC, optimizing its switching performance at high frequencies.
The dimensions of this unit are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
It operates efficiently within a temperature range of -55°C to 175°C, making it suitable for harsh environments.
This model features an enhancement mode N-channel, which allows for precise control in switching applications.
The maximum drain-source resistance (Rds) for this MOSFET is 75 mΩ, which helps reduce conduction losses.
The safe maximum gate-source voltages for this model are between -16 V and +16 V to prevent damage.
It is optimized for use in power conversion and switching applications, including DC-DC converters and motor drivers.
This MOSFET has a pin count of 3, suitable for various circuit designs.
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