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Infineon N-Channel IGBT, 75 A 600 V, 3-Pin TO-247 Through Hole Mount IKW75N60TFKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IKW75N60TFKSA1 |
| Mount Type | Through Hole |
| Series | TrenchStop |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | RoHS, JEDEC, Pb-free lead plating |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 75A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 428W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- Maximum continuous collector current of 75 A ensures robust power handling.
- Maximum collector emitter voltage of 600 V supports high-voltage applications.
- Packaged in TO-247 with through-hole mount for easy PCB integration.
- Wide operating temperature range from -40°C to +175°C enables versatility.
- Low collector-emitter saturation voltage of 2 V improves efficiency and reduces heat.
- High switching speed of 20 kHz minimizes energy loss during operation.
- RoHS, JEDEC compliant with Pb-free lead plating to meet standards.
- TrenchStop series design enhances ruggedness and performance.
Product Description
Infineon IKW75N60TFKSA1 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power electronics applications requiring reliable switching and high current handling in a compact form factor. Rated for a maximum continuous collector current of 75 A and collector emitter voltage of 600 V, it is packaged in a 3-pin TO-247 case with through-hole mount for ease of assembly.
This IGBT features a low saturation voltage of 2 V, improving efficiency by reducing conduction losses. Its high switching speed of 20 kHz allows for efficient operation in fast switching power control applications, minimizing energy dissipation during transitions.
The device operates reliably over a wide temperature range of -40°C to 175°C, enabling deployment in harsh industrial environments. It complies with RoHS, JEDEC, and Pb-free lead plating standards, supporting eco-friendly manufacturing requirements.
Infineon IKW75N60TFKSA1 belongs to the TrenchStop series known for ruggedness and optimized switching characteristics, making it ideal for use in frequency converters, motor control automation systems, uninterruptible power supplies, and renewable energy inverters.
Maximum continuous collector current of 75 A provides robust power switching capabilities. Maximum collector emitter voltage of 600 V supports high-voltage applications. Low VCE(sat) of 2 V ensures lower power loss and heat generation.
Switching speed of 20 kHz enhances efficiency in power electronics. Wide operating temperature range from -40°C up to 175°C suited for industrial environments. Compliant with RoHS, JEDEC standards and contains Pb-free lead plating.
3-pin TO-247 through-hole package ensures easy mounting and thermal dissipation. TrenchStop series technology for improved ruggedness and performance. Applications include frequency converters, UPS, motor controls, and renewable energy systems.
This transistor is essential for industrial, laboratory, HVAC, manufacturing, and commercial power electronics systems requiring efficient, high-current, high-voltage switching with reliable thermal management. Discover more IGBTs and power semiconductors at EnvMart for your electronic component needs.
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Frequently Asked Questions
The maximum continuous collector current for the IKW75N60TFKSA1 is 75 A, allowing for robust power handling in various applications.
This model has a maximum collector emitter voltage rating of 600 V, making it suitable for high-voltage applications.
The IKW75N60TFKSA1 is packaged in a 3-pin TO-247 case, designed for through-hole mounting.
It operates over a wide temperature range from -40°C to 175°C, which enables its use in harsh industrial environments.
The maximum collector-emitter saturation voltage (VCE(sat)) for this model is 2 V, which helps improve efficiency by reducing power loss.
This IGBT features a high switching speed of 20 kHz, which minimizes energy loss during operation.
It complies with RoHS, JEDEC standards, and features Pb-free lead plating, supporting eco-friendly manufacturing requirements.
This model is suitable for applications such as frequency converters, motor control automation systems, uninterruptible power supplies, and renewable energy inverters.
The maximum power dissipation for the IKW75N60TFKSA1 is rated at 428 W, which is important for thermal management in power electronics.
The maximum gate emitter voltage (VGEO) for this IGBT is 20 V, which is critical for its operation.
This IGBT features an N-channel design, which is common for applications requiring efficient switching.
The country of origin for this model is India, indicating its manufacturing location.
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