Toshiba N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 Surface Mount SSM6N7002KFU,LF(T

Toshiba SSM6N7002KFU,LF(T is an N-Channel MOSFET semiconductor device optimized for fast switching and efficient power control in electronic circuits. It is packaged in a compact 6-pin US6 surface mount package, measuring 2.1 mm in length, 2 mm in width, and 900 μm in height, designed to fit modern PCB layouts.

This MOSFET handles a maximum continuous drain current of 300 mA and can sustain a maximum drain-source voltage of 60 V, making it suitable for low to medium power applications. Its maximum drain-source resistance of 1.2 milliohms ensures minimal conduction losses, while the maximum power dissipation rating of 500 mW supports robust thermal management.

The gate-source voltage tolerance is rated up to 20 V, and the device performs reliably within an operating temperature range from -55°C up to 150°C. Its low typical gate charge of 0.39 nanocoulombs enables swift switching performance, reducing switching losses and improving efficiency.

This component is primarily intended for use in power management circuits, switching regulators, signal amplifiers, and other semiconductor applications in industrial, commercial, and consumer electronics contexts. It does not carry automotive industry certification, making it ideal for general purpose usage.

Its silicon-based N-channel construction allows integration into designs requiring efficient switching transistors operating at moderate voltages and currents, including power supplies, motor drivers, and low power amplification systems.

The device features a compact 6-pin US6 package suitable for surface mounting. It has a low maximum drain-source resistance of 1.2 milliohms to ensure efficient conduction. The MOSFET supports a maximum gate-source voltage of 20 V and operates reliably between -55°C and 150°C.

The typical gate charge is very low at 0.39 nC, enabling rapid switching with minimal losses. The maximum power dissipation is rated at 500 mW for safe thermal operation. Physical dimensions are 2.1 mm in length, 2 mm in width, and 900 μm in height.

This component is RoHS compliant and suitable for general semiconductor applications. Explore more MOSFETs and semiconductor components to meet your project's power switching and amplification needs at EnvMart.