Toshiba Type P-Channel MOSFET, 6 A, 20 V, 3-Pin SOT-23 SSM3J328R,LF(T

Toshiba SSM3J328R,LF(T is a Type P-Channel MOSFET specifically engineered for power management and switching applications. This semiconductor device supports a maximum continuous drain current of 6 amperes and a drain-source voltage of up to 20 volts, making it suitable for compact electronic circuits requiring efficient and reliable switching.

The device’s small form factor surface mount SOT-23 package with 3 pins enables integration into densely packed PCBs commonly used in industrial, consumer electronics, and automotive systems. It offers a low on-resistance of 88.4 milliohms, helping reduce conduction losses and improve energy efficiency in circuits.

With an operating temperature range spanning from -55°C to 150°C, the MOSFET is capable of reliable operation under severe thermal conditions, suitable for applications in harsh or outdoor environments. Its maximum power dissipation of 2 watts supports moderate heat generation, necessitating appropriate thermal management in design.

The typical gate charge of 12.8 nanocoulombs at an 8V gate-source voltage permits fast switching speeds, critical for efficient power regulation and conversion. The device’s typical forward voltage of 870 millivolts further contributes to its energy efficiency.

Dimensional characteristics include a length of approximately 2.4 mm, width of 2.9 mm, and height of 800 micrometers, making it compatible with standard surface mounting processes and allowing compact board layouts.

Type P channel MOSFET ideal for power management switching. Maximum continuous drain current of 6A supports high current loads. Drain-source voltage rating of 20V for medium voltage applications. Low drain-source resistance of 88.4mΩ reduces conduction losses.

Compact 3-pin SOT-23 surface mount package. Wide operational temperature range from -55°C to 150°C. Maximum power dissipation of 2W for thermal performance. Fast switching enabled by 12.8nC typical gate charge at 8V gate-source.

Compact package dimensions: 2.4mm length, 2.9mm width, 800µm height. Forward voltage of 870mV ensures efficient conduction.

This Toshiba MOSFET is widely used across industrial, automotive, and consumer electronics for power regulation, switching, and management tasks. Its reliability and efficiency make it a preferred choice for engineers designing high-performance systems. Explore more Toshiba semiconductor products and electronic components at EnvMart.