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onsemi N-Channel Power MOSFET, 12 A, 60 V, TO-252 Surface Mount, 3-Pin NTD3055-094T4G

Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.38mm
Length 6.73mm
Model NTD3055-094T4G
Width 6.22mm
Mount Type Surface
Series NTD3055-094
Maximum Operating Temperature 175°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 12A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 94mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 48W
Typical Gate Charge Qg @ Vgs 10.9nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 0.94V

Key Features

  • This MOSFET features an enhancement mode N-channel channel type to ensure high performance.
  • It supports a maximum continuous drain current of 12 amperes for demanding power applications.
  • The device offers a maximum drain-source voltage of 60 volts, suitable for various circuits.
  • Low on-resistance of 94 milliohms reduces conduction losses significantly.
  • Typical gate charge is 10.9 nanocoulombs for efficient switching.
  • Operating temperature ranges from −55°C to 175°C for harsh environments.
  • Automotive standard AEC-Q101 compliance ensures durability in automotive systems.
  • Surface mount TO-252 package with 3 pins supports modern PCB assembly methods.

Product Description

onsemi NTD3055-094T4G is a high-performance N-Channel Power MOSFET designed for demanding industrial, automotive, and power management applications. It features a continuous drain current rating of 12 amperes and a maximum drain-source voltage of 60 volts, ensuring reliable switching and conduction in power electronics circuits.

This MOSFET is packaged in a TO-252 surface mount case with three pins, providing compact and efficient mounting on printed circuit boards. It features an enhancement mode N-channel channel operation with a low on-resistance of 94 milliohms, which minimizes power losses.

Typical gate charge of 10.9 nanocoulombs at gate-source voltage ensures fast switching times, optimizing efficiency in PWM and motor drive applications. The device is rated for operation from −55°C ambient temperature up to a maximum of 175°C, making it suitable for robust automotive and industrial environments. It complies with the AEC-Q101 automotive standard, certifying reliability under automotive conditions.

The MOSFET dimensions are precisely specified as 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height, enabling design engineers to plan layouts effectively. The gate-source voltage rating of −20 V to +20 V offers stable drive capability and protection against high voltage spikes.

Typical uses include power switching in automotive electronics, industrial motor drivers, power regulators, and general-purpose power management circuits in electronics manufacturing and repair laboratories.

onsemi’s NTD3055-094T4G integrates seamlessly with PCB designs requiring compact, high current MOSFETs optimized for low losses and fast switching, all complying with automotive grade standards.

This MOSFET features an enhancement mode N-channel channel type to ensure high performance. It supports a maximum continuous drain current of 12 amperes for demanding power applications. The device offers a maximum drain-source voltage of 60 volts, suitable for various circuits.

Low on-resistance of 94 milliohms reduces conduction losses significantly. Typical gate charge is 10.9 nanocoulombs for efficient switching. Operating temperature ranges from −55°C to 175°C for harsh environments. Automotive standard AEC-Q101 compliance ensures durability in automotive systems.

Surface mount TO-252 package with 3 pins supports modern PCB assembly methods. Compact physical dimensions provide flexibility in PCB layout design. Explore the Electronics & Electricals category on EnvMart for this and other semiconductor power devices from top brands, ideal for your next industrial project or repair job.

onsemi N-Channel Power MOSFET, 12 A, 60 V, TO-252 Surface Mount, 3-Pin NTD3055-094T4G
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Frequently Asked Questions

The maximum continuous drain current for the NTD3055-094T4G is 12 amperes, making it suitable for demanding power applications.

This MOSFET supports a maximum drain-source voltage of 60 volts, suitable for various circuits.

The on-resistance of this MOSFET is 94 milliohms, which helps to reduce conduction losses significantly.

The typical gate charge for the NTD3055-094T4G is 10.9 nanocoulombs, facilitating efficient switching.

The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.

This model operates within a temperature range of −55°C to 175°C, making it suitable for harsh environments.

The MOSFET complies with the AEC-Q101 automotive standard, ensuring reliability in automotive systems.

It features an enhancement mode N-channel type, which ensures high performance in power applications.

The maximum gate-source voltage rating for this model is −20 V to +20 V, providing stable drive capability.

The maximum power dissipation for this MOSFET is 48 watts, allowing it to handle significant power loads.

The TO-252 package has 3 pins, supporting modern PCB assembly methods.

This MOSFET is suitable for power switching in automotive electronics, industrial motor drivers, and power management circuits.

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