onsemi NPN Power Transistor 16 A, 250 V, 200 W TO-3P Through Hole NJW21194G

onsemi NJW21194G is an NPN power transistor engineered for demanding electronic applications requiring high current and voltage capacity. Operating with a maximum collector current of 16 amperes and capable of withstanding up to 250 volts collector-emitter voltage, this transistor is suitable for power amplification and switching uses in industrial and commercial electronic systems.

The device features a TO-3P package with three pins and a through-hole mounting style, providing robust mechanical and thermal performance. Designed to dissipate a maximum power of 200 watts, it efficiently manages heat under heavy electrical loads. This transistor has a minimum current gain (hFE) of 8, enabling effective amplification, and supports transition frequencies up to 1 MHz, facilitating high-frequency operation.

With a wide operating temperature range from -65°C to 150°C, the NJW21194G ensures reliable functioning in harsh environmental conditions typical in industrial, manufacturing, and power control applications. Its maximum collector-base voltage rating of 400 V dc and emitter-base voltage of 5 V provide substantial safety margins in voltage-sensitive circuits.

Physical dimensions include a height of 40.3 mm, length of 15.8 mm, and width of 5 mm, making it suitable for standard power transistor sockets in electronic assemblies. While it is not automotive qualified, it is widely applicable in power electronics, motor drives, and other demanding semiconductor circuit designs.

The NJW21194G extends versatility for power switching, amplifier design, and electronic control units within laboratory, industrial manufacturing, and commercial electronic equipment contexts. Its robust power characteristics and package design support effective integration into existing PCB layouts requiring high power transistors.

Constructed with a TO-3P package and through-hole mounting for solid mechanical stability. Maximum continuous collector current of 16 A and collector-emitter voltage of 250 V for high power handling. Power dissipation capability of 200 W supports demanding applications.

Wide operating temperature range ensures use in extreme climates. Reliable gain with a minimum hFE of 8 and frequency response up to 1 MHz. Designed for industrial and power electronics applications including amplification and switching.

Non-automotive rated but suitable for various industrial semiconductor uses. Physical dimensions allow for compatible mounting and heat dissipation. Explore our Electronics & Electricals section for more Power Transistors from onsemi and other leading brands at EnvMart.