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Toshiba N-Channel MOSFET, 100 A Continuous Drain Current, 40 V Drain Source Voltage, Enhancement Mode, 8-Pin TSON TPN2R304PL
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Height | 850μm |
| Length | 3.1mm |
| Model | TPN2R304PL |
| Width | 3.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 104W |
| Typical Gate Charge Qg @ Vgs | 41nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Supports a maximum continuous drain current of 100 A.
- Features a maximum drain-source voltage of 40 V, suitable for power applications.
- Equipped with an 8-pin TSON surface mount package for compact PCB design.
- Operates with enhancement mode channel type for efficient switching.
- Offers a low typical drain-source on-resistance of 1.8 mΩ at VGS=10 V, minimizing power loss.
- Designed for operation across a wide temperature range from -55°C to 175°C.
- Includes small gate charge of 10.8 nC (typical) allowing fast switching speeds.
- Low leakage current ensures reduced power dissipation during off state.
Product Description
Toshiba TPN2R304PL is an N-Channel MOSFET engineered for enhancing the efficiency of DC-DC converters, switching voltage regulators, and motor drivers. It supports a maximum continuous drain current of 100 A and a maximum drain-source voltage of 40 V, making it suitable for demanding power electronics applications.
This enhancement mode MOSFET is housed in a compact 8-pin TSON surface mount package measuring 3.1 mm x 3.1 mm with a height of 850 μm, optimizing PCB space.
Key electrical characteristics include a low typical drain-source on-resistance (RDS(ON)) of 1.8 milliohms at a gate voltage of 10 V, a maximum gate-source voltage rating of 20 V, and a typical gate charge of 41 nC at specified gate voltage. The device features a forward voltage of -1.2 V and exhibits a low leakage current of 10 μA maximum under rated voltage conditions.
Rated for operation from -55°C up to 175°C, the TPN2R304PL MOSFET can withstand harsh thermal environments, making it suitable for automotive and industrial electronic systems. It achieves small output charge (Qoss) and minimal switching losses, improving overall energy efficiency.
Maximum continuous drain current of 100 A for high power capability. 40 V maximum drain-source voltage to support medium voltage applications. Enhanced switching performance due to low gate and output charges. Compact 8-pin TSON package enabling surface mount assembly.
Wide operating temperature range for versatile application environments. Low gate threshold voltage between 1.4 V and 2.4 V for precise control. High power dissipation capacity of 104 W for robust operation.
This MOSFET is ideal for use in industrial, automotive, and consumer electronics sectors requiring efficient power switching, such as power supplies, motor controls, and voltage regulation circuits.
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Frequently Asked Questions
The maximum continuous drain current for this model is 100 A.
This MOSFET has a maximum drain-source voltage rating of 40 V.
It is housed in an 8-pin TSON surface mount package, measuring 3.1 mm x 3.1 mm with a height of 850 μm.
The typical drain-source on-resistance (RDS(ON)) at VGS=10 V is 1.8 mΩ.
This model operates across a wide temperature range from -55°C to 175°C.
The maximum power dissipation capacity is 104 W.
The typical gate charge (Qg) at the specified gate voltage is 41 nC.
This unit uses an enhancement mode N-channel type.
The maximum gate-source voltage rating for this MOSFET is 20 V.
The forward voltage for this model is -1.2 V.
This MOSFET is suitable for applications in power supplies, motor controls, and voltage regulation circuits.
The typical leakage current is a maximum of 10 μA under rated voltage conditions.
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