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onsemi PNP Power Transistor 16 A, 250 V, TO-247 3-Pin, Through Hole MJW21193G

Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.65mm
Length 16.26mm
Model MJW21193G
Width 5.3mm
Mount Type Through Hole
Series MJW21193
Maximum Operating Temperature 150°C
Package Type TO-247
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -250V
Minimum DC Current Gain hFE 8
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 400V dc
Maximum Power Dissipation Pd 200W
Maximum DC Collector Current Idc -16A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Maximum DC Collector Current of 16 amperes ensures high current capacity.
  • Supports a Maximum Collector Emitter Voltage of 250 volts for robust operation.
  • Three-pin TO-247 package provides reliable through-hole mounting.
  • Maximum Power Dissipation rating of 200 watts enables high power handling.
  • Operating temperature range from -65°C to 150°C suits industrial applications.
  • PNP transistor configuration with a minimum DC current gain (hFE) of 8.
  • Maximum Transition Frequency of 1 MHz for efficient switching performance.
  • Designed for single transistor use in power applications.

Product Description

onsemi MJW21193G is a PNP power transistor designed for high current and voltage applications. Featuring a maximum collector current of 16 A and a collector-emitter voltage of 250 V, it supports demanding power management tasks in electronic circuits. The transistor is housed in a three-pin TO-247 package suitable for through-hole mounting, ensuring ease of installation in power supply and amplification devices.

This transistor boasts a maximum power dissipation of 200 W, allowing it to operate efficiently under substantial load conditions. With a broad operating temperature range from -65°C up to 150°C, the MJW21193G is reliable for industrial, manufacturing, and commercial electronics use.

The device has a minimum DC current gain (hFE) of 8 and a maximum transition frequency of 1 MHz, making it effective for switching and amplification in various semiconductor applications. Dimensions are precisely 16.26 mm in length, 5.3 mm in width, and 1.65 mm in height, facilitating PCB design considerations.

This PNP transistor is well-suited for use in power conversion, motor control, power supplies, and other industrial electronics applications requiring robust and reliable switching components.

Maximum DC Collector Current of 16 A ensures substantial current handling capacity. Maximum Collector Emitter Voltage of 250 V supports high voltage operations. TO-247 package with 3 pins enables straightforward through-hole mounting.

Maximum Power Dissipation at 200 W allows operation under heavy electrical loads. Operating temperature range from -65°C to 150°C accommodates industrial conditions. Minimum DC Current Gain (hFE) of 8 provides efficient amplification.

Maximum Transition Frequency of 1 MHz enhances switching capabilities. Dimensions: Length 16.26 mm, Width 5.3 mm, Height 1.65 mm optimize space in circuits. Explore more Power Transistors and semiconductor components at EnvMart for your advanced electronic design needs.

onsemi PNP Power Transistor 16 A, 250 V, TO-247 3-Pin, Through Hole MJW21193G
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Frequently Asked Questions

The maximum DC collector current of this model is 16 amperes, allowing it to handle substantial current loads effectively.

This transistor supports a maximum collector-emitter voltage of 250 volts, suitable for high voltage applications.

The dimensions of this unit are 16.26 mm in length, 5.3 mm in width, and 1.65 mm in height, which are important for PCB design.

It has a maximum power dissipation rating of 200 watts, enabling efficient operation under heavy electrical loads.

The operating temperature range is from -65°C to 150°C, making it suitable for various industrial applications.

The minimum DC current gain (hFE) for this power transistor is 8, which supports effective amplification.

This transistor has a maximum transition frequency of 1 MHz, enhancing its switching performance.

It features a three-pin TO-247 package that allows for straightforward through-hole mounting.

This model is configured as a single PNP transistor, designed for various power applications.

The maximum emitter-base voltage (VEBO) for this unit is 5 volts.

It is suitable for power conversion, motor control, and power supplies in industrial electronics.

The maximum collector-base voltage (VCBO) for this transistor is 400 volts DC.

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