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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IDH20G65C6XKSA1 |
| Mount Type | Through Hole |
| Series | XDH20G65 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220-2 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | JEDEC (J-STD20 and JESD22) |
| Maximum Continuous Forward Current If | 41A |
| Peak Reverse Repetitive Voltage Vrrm | 650V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 153μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 99A |
| Maximum Forward Voltage Vf | 1.25V |
Infineon IDH20G65C6XKSA1 is a Schottky barrier diode designed for high power and frequency semiconductor applications. It features a 650 V peak reverse voltage and a maximum continuous forward current of 41 A, housed in a robust TO-220-2 through-hole package. The diode exhibits a low forward voltage drop of 1.25 V that improves system efficiency by reducing power dissipation.
Operating reliably over a wide temperature range from -55°C to 175°C, this diode is suitable for harsh industrial environments including power supplies, automotive electronics (non-automotive certified), and general semiconductor circuits requiring fast rectifiers.
The diode's peak non-repetitive surge current rating of 99 A allows it to handle transient overloads effectively. Its low peak reverse current of 153 μA ensures minimal leakage current, enhancing the device's overall energy efficiency, especially in switching power applications.
The TO-220-2 package design facilitates easy mounting on through-hole PCBs, allowing efficient heat dissipation when paired with a suitable heat sink. This contributes to improved cooling performance and system reliability.
Manufactured in compliance with JEDEC standards (J-STD20 and JESD22), this component ensures consistent quality and proven reliability. The single diode configuration supports applications that require standard rectification duties.
Through hole mount type provides reliable mechanical and electrical connection. Maximum forward voltage of 1.25 V to ensure efficient rectification. Wide operating temperature range from -55°C to 175°C for robust performance.
Peak non-repetitive forward surge current of 99 A supports transient loads. Peak reverse repetitive voltage (VRRM) of 650 V ensures high voltage blocking capability. Low peak reverse current of 153 μA minimizes leakage losses.
Complies with JEDEC (J-STD20 and JESD22) standards for quality assurance. Schottky diode configuration enables fast switching and low forward voltage drop.
This Infineon Schottky Barrier Diode is a suitable choice for industrial, laboratory, power supply, and semiconductor design applications. Browse more Schottky Diodes & Rectifiers and semiconductor components on EnvMart to find matching parts and accessories.
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