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onsemi PNP Power Transistor 5 A, 25 V, 12.5 W, TO-252 Surface Mount 4-Pin DPAK MJD210T4G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | MJD210T4G |
| Width | 10.41mm |
| Mount Type | Surface |
| Series | MJD210 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | -25V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 8V |
| Maximum Collector Base Voltage VCBO | 40V dc |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 12.5W |
| Maximum DC Collector Current Idc | -5A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 10MHz |
Key Features
- Designed for high power PNP transistor applications.
- Features a 4-pin DPAK configuration for surface mount technology.
- Offers a maximum collector current of 5 A for demanding circuits.
- Operates reliably across a temperature range from -65°C to 150°C.
- Supports a maximum collector-emitter voltage of 25 V for robust switching.
- Ensures a minimum DC current gain of 10 for consistent amplification.
- Package dimensions are 6.73 mm length, 10.41 mm width, and 2.38 mm height.
- Complies with automotive AEC-Q101 standard for quality and reliability.
Product Description
onsemi MJD210T4G is a PNP power transistor engineered for high current switching and amplification in industrial and automotive electronics. It supports up to 5 A collector current (Idc) and sustains a collector-emitter voltage (Vceo) of up to 25 V. The transistor is housed in a compact TO-252 (DPAK) package, optimized for surface mounting on circuit boards.
This transistor offers robust operation with a maximum power dissipation of 12.5 W, ensuring performance stability over a wide operating temperature span from -65°C to 150°C. The device features a minimum DC current gain (hFE) of 10 and a maximum transition frequency (ft) of 10 MHz, making it suitable for both switching and amplification tasks.
The 4-pin configuration facilitates diverse circuit integration, while package dimensions of 6.73 mm length, 10.41 mm width, and 2.38 mm height enable efficient board layout. Additionally, the transistor is automotive qualified per the AEC-Q101 standard, signifying its reliability in demanding automotive environments.
Typical applications include power management circuits, industrial control systems, automotive electronics, and switching regulators. Its surface mount design aids in high-volume automated assembly, improving production efficiency.
High power PNP transistor for demanding electronic applications. Surface mount TO-252 package with 4-pin DPAK footprint. Maximum collector current 5 A and voltage capability 25 V. Wide operating temperature range from -65°C to 150°C.
Minimum DC current gain of 10 for consistent performance. Compliance with AEC-Q101 automotive reliability standard. Compact package suitable for industrial and automotive circuits. Supports high efficiency power switching and amplification.
Explore more on Power Transistors and Bipolar Transistors at EnvMart for reliable industrial and automotive electronic components.
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Frequently Asked Questions
The maximum collector current for the MJD210T4G is 5 A, making it suitable for demanding electronic applications.
It operates reliably across a temperature range from -65°C to 150°C, ensuring stability in various conditions.
This model comes in a TO-252 package, which is designed for surface mounting on circuit boards.
The maximum collector-emitter voltage (Vceo) for the MJD210T4G is 25 V, providing robust switching capabilities.
The MJD210T4G features a minimum DC current gain (hFE) of 10, ensuring consistent amplification performance.
The dimensions of this transistor are 6.73 mm in length, 10.41 mm in width, and 2.38 mm in height.
It complies with the AEC-Q101 automotive standard, ensuring quality and reliability in automotive applications.
The maximum power dissipation for the MJD210T4G is 12.5 W, allowing it to handle significant power loads.
The maximum transition frequency (ft) of the MJD210T4G is 10 MHz, making it suitable for high-frequency applications.
Typical applications include power management circuits, industrial control systems, automotive electronics, and switching regulators.
This model features a 4-pin configuration, facilitating diverse circuit integration.
The maximum emitter-base voltage (VEBO) for the MJD210T4G is 8 V, which is important for its operational limits.
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