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onsemi P-Channel MOSFET Type NTR2101P, 3.7 A, 8 V Enhancement Mode, 3-Pin SOT-23 Package NTR2101PT1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.01mm |
| Length | 3.04mm |
| Model | NTR2101PT1G |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | NTR2101P |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.7A |
| Maximum Drain Source Voltage Vds | 8V |
| Maximum Drain Source Resistance Rds | 120mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 960mW |
| Typical Gate Charge Qg @ Vgs | 12nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | 1V |
| P-Channel MOSFET Transistor, 3.7 A, 8 V, 3-Pin SOT-23 onsemi NTR2101PGBrand | ON Semiconductor |
Key Features
- This MOSFET operates in enhancement mode for reliable switching performance.
- Maximum drain-source resistance Rds(on) is 120 milliohms for efficient conduction.
- Supports a maximum power dissipation of 960 mW for high thermal stability.
- Designed for surface mount technology with a compact SOT-23 package of dimensions 3.04 mm length and 1.4 mm width.
- Operational temperature range from -55°C to 150°C enables usage in demanding industrial environments.
- The typical gate charge is 12 nC at Vgs, enabling fast switching.
- Maximum gate-source voltage rating is -8 V to +8 V ensuring robust gate control.
- Forward voltage drop is approximately 1 V under operation.
Product Description
onsemi NTR2101PT1G is a P-Channel Power MOSFET designed for efficient switching applications with a maximum continuous drain current of 3.7 A and a maximum drain-source voltage of 8 V. Encased in a compact 3-pin SOT-23 surface mount package, it facilitates easy integration into modern electronic circuits requiring high performance in a small footprint.
This device operates in enhancement mode, providing reliable transistor operation with low on-resistance of 120 mΩ, reducing power loss and heat generation. It has a maximum power dissipation rating of 960 mW, allowing it to sustain substantial load conditions.
Key physical dimensions include a length of 3.04 mm, width of 1.4 mm, and a height of 1.01 mm, making it ideal for space-constrained printed circuit board assemblies. The device supports a wide operating temperature range from -55°C to 150°C, suitable for automotive, industrial, and commercial electronic applications.
The typical gate charge is 12 nC measured at gate-source voltage, ensuring efficient switching speeds and reduced switching losses. Its gate-source voltage rating ranges from -8 V to +8 V, providing operational safety margins for various circuit designs. Additionally, the forward voltage is rated at 1 V, supporting stable conduction with minimal voltage drop.
Given the absence of automotive certification and standards approvals, this MOSFET is best suited for general industrial and electronic equipment applications rather than specialized automotive systems.
This MOSFET is ideal for switching and amplification tasks in power control circuits. Applicable in power supplies, motor control, and signal amplification scenarios. Designed for robust performance in surface mounted technology assemblies.
Suitable for industrial, construction, electronic equipment, and power management applications. Packaged in tape for automated insertion during high-volume assembly. Explore more on the EnvMart platform for industrial semiconductors and power components to find complementary products and related technology.
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Frequently Asked Questions
The maximum continuous drain current for this model is 3.7 A.
The maximum drain-source voltage for this MOSFET is 8 V.
The maximum drain-source resistance Rds(on) is 120 milliohms.
The typical gate charge is 12 nC at gate-source voltage.
The dimensions of the SOT-23 package are 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height.
The operational temperature range for the NTR2101PT1G is from -55°C to 150°C.
The maximum power dissipation for this model is 960 mW.
The forward voltage drop is approximately 1 V during operation.
The maximum gate-source voltage rating is -8 V to +8 V.
This model supports surface mount technology.
It is suitable for applications in power supplies, motor control, and signal amplification.
The channel type of the NTR2101PT1G is P-Channel.
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