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Nexperia N-Channel MOSFET, 100 A, 30 V Enhancement Mode, 3-Pin TO-220 Package PSMN2R7-30PL,127

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin Philippines
Brand Nexperia
Height 16mm
Length 10.3mm
Model PSMN2R7-30PL,127
Width 4.7mm
Mount Type Through Hole
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 100A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 2.7mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 170W
Typical Gate Charge Qg @ Vgs 66nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 0.7V

Key Features

  • Maximum continuous drain current of 100 A for high power handling.
  • Drain-source voltage rating of up to 30 V ensures robust operation.
  • Low maximum drain-source resistance of 2.7 milliohms for efficient conductivity.
  • High power dissipation capability up to 170 W enhances thermal management.
  • Wide operating temperature range from -55°C to 175°C supports harsh environments.
  • Through-hole mount type with 3-pin configuration enables easy PCB installation.
  • Typical gate charge of 66 nC optimizes switching performance.
  • Measures 16 mm in height, 10.3 mm length, and 4.7 mm width for compact design.

Product Description

Nexperia PSMN2R7-30PL,127 is a high-performance N-Channel MOSFET designed for power switching and amplification in electronic circuits. Featuring a maximum continuous drain current of 100 A and a drain-source voltage capability of 30 V, this enhancement-mode transistor provides reliable and efficient operation in demanding applications.

The device comes in a compact 3-Pin TO-220 package with through-hole mounting, facilitating easy integration into power management and control circuits. Its low maximum drain-source resistance of 2.7 milliohms ensures minimal conduction losses, enhancing overall system efficiency.

With a maximum power dissipation of 170 W, this MOSFET can operate safely under high load conditions, supported by its broad temperature range from -55°C to 175°C, making it suitable for industrial, automotive, and electronic manufacturing use cases.

The typical gate charge of 66 nC and forward voltage of 0.7 V contribute to swift switching and low loss operation, ideal for high-frequency PWM, motor control, and power conversion applications.

Dimensionally, the transistor measures 16 mm in height, 10.3 mm in length, and 4.7 mm in width, providing a balance between conduction capability and compactness. This product is manufactured in the Philippines, ensuring compliance with stringent quality standards.

Maximum continuous drain current of 100 A ensures high current handling. 30 V drain-source voltage rating supports versatile power applications. Low Rds(on) of 2.7 milliohms for efficient conduction. High power dissipation rating of 170 W for thermal resilience.

Wide operating temperature range from -55°C to 175°C. TO-220 package with 3 pins allows easy circuit integration. Typical gate charge of 66 nC for fast switching. Compact physical dimensions for space-efficient design. Manufactured in Philippines ensuring quality and reliability.

This Nexperia MOSFET is ideal for industrial electronics, power management, automotive, and manufacturing sectors requiring robust and efficient power transistors. Explore more MOSFETs and electronic components on EnvMart for advanced circuit solutions.

Nexperia N-Channel MOSFET, 100 A, 30 V Enhancement Mode, 3-Pin TO-220 Package PSMN2R7-30PL,127
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Frequently Asked Questions

The maximum continuous drain current for this model is 100 A, allowing for high power handling in various applications.

This MOSFET has a drain-source voltage rating of up to 30 V, ensuring robust operation in power applications.

The maximum power dissipation capability is 170 W, which enhances thermal management under high load conditions.

The typical gate charge for this model is 66 nC, optimizing its switching performance.

This MOSFET measures 16 mm in height, 10.3 mm in length, and 4.7 mm in width, providing a compact design.

It operates within a wide temperature range from -55°C to 175°C, making it suitable for harsh environments.

The Nexperia PSMN2R7-30PL,127 features a through-hole mounting type with a 3-pin configuration for easy PCB installation.

The maximum drain-source resistance is 2.7 milliohms, which ensures efficient conductivity and minimal conduction losses.

This model is an N-channel MOSFET, designed for enhancement mode operation.

The forward voltage for this model is 0.7 V, contributing to its low loss operation.

The maximum gate-source voltage is -20 V to +20 V, allowing for flexible control in circuit applications.

This Nexperia MOSFET is manufactured in the Philippines, ensuring compliance with stringent quality standards.

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