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| Country of Origin | Philippines |
|---|---|
| Brand | Nexperia |
| Height | 16mm |
| Length | 10.3mm |
| Model | PSMN2R7-30PL,127 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 2.7mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 170W |
| Typical Gate Charge Qg @ Vgs | 66nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.7V |
Nexperia PSMN2R7-30PL,127 is a high-performance N-Channel MOSFET designed for power switching and amplification in electronic circuits. Featuring a maximum continuous drain current of 100 A and a drain-source voltage capability of 30 V, this enhancement-mode transistor provides reliable and efficient operation in demanding applications.
The device comes in a compact 3-Pin TO-220 package with through-hole mounting, facilitating easy integration into power management and control circuits. Its low maximum drain-source resistance of 2.7 milliohms ensures minimal conduction losses, enhancing overall system efficiency.
With a maximum power dissipation of 170 W, this MOSFET can operate safely under high load conditions, supported by its broad temperature range from -55°C to 175°C, making it suitable for industrial, automotive, and electronic manufacturing use cases.
The typical gate charge of 66 nC and forward voltage of 0.7 V contribute to swift switching and low loss operation, ideal for high-frequency PWM, motor control, and power conversion applications.
Dimensionally, the transistor measures 16 mm in height, 10.3 mm in length, and 4.7 mm in width, providing a balance between conduction capability and compactness. This product is manufactured in the Philippines, ensuring compliance with stringent quality standards.
Maximum continuous drain current of 100 A ensures high current handling. 30 V drain-source voltage rating supports versatile power applications. Low Rds(on) of 2.7 milliohms for efficient conduction. High power dissipation rating of 170 W for thermal resilience.
Wide operating temperature range from -55°C to 175°C. TO-220 package with 3 pins allows easy circuit integration. Typical gate charge of 66 nC for fast switching. Compact physical dimensions for space-efficient design. Manufactured in Philippines ensuring quality and reliability.
This Nexperia MOSFET is ideal for industrial electronics, power management, automotive, and manufacturing sectors requiring robust and efficient power transistors. Explore more MOSFETs and electronic components on EnvMart for advanced circuit solutions.
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