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Vishay SQ Rugged N-Channel MOSFET, 40 A, 60 V Enhancement Mode, 3-Pin TO-252 SQD40N06-14L_GE3

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Vishay SQ Rugged N-Channel MOSFET, 40 A, 60 V Enhancement Mode, 3-Pin TO-252 SQD40N06-14L_GE3

Name: Vishay SQ Rugged N-Channel MOSFET, 40 A, 60 V Enhancement Mode, 3-Pin TO-252 SQD40N06-14L_GE3
Brand: Vishay
SKU: 235866
Price: 1.22 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Height	2.38mm
Length	6.73mm
Model	SQD40N06-14L_GE3
Width	6.22mm
Mount Type	Surface
Series	SQ Rugged
Maximum Operating Temperature	175°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	40A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	29mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	75W
Typical Gate Charge Qg @ Vgs	34nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.2V

Key Features

The MOSFET features a 3-pin TO-252 package optimized for surface mount mounting.
It operates in enhancement mode with a low maximum drain-source resistance of 29 milliohms.
The device supports a maximum power dissipation of 75 W and a continuous junction temperature up to 175°C.
The gate charge is 34 nanoCoulombs at Vgs, and maximum gate-source voltage tolerance is -20 V to +20 V.
It conforms to automotive AEC-Q101 standards for ruggedness and reliability.
The compact dimensions are 6.73 mm length, 6.22 mm width, and 2.38 mm height.
Typical forward voltage drop is 1.2 V.

Product Description

Vishay SQD40N06-14L_GE3 MOSFET is part of the SQ Rugged series, engineered specifically for demanding automotive and industrial electronic applications requiring high reliability and robust performance.

This enhancement-mode N-Channel MOSFET supports a maximum continuous drain current of 40 amps and a drain-source voltage rating of 60 volts. Its low on-resistance of 29 milliohms ensures efficient power handling and minimal losses.

Mounted in a 3-pin TO-252 surface-mount package, it offers a compact footprint suitable for space-saving designs. The MOSFET is qualified to the AEC-Q101 automotive standard and can operate continuously at junction temperatures up to 175°C, making it ideal for harsh environments.

The device features a typical gate charge of 34 nanoCoulombs, facilitating fast switching speeds, and a maximum gate-source voltage range from -20 V to +20 V, providing design reliability and flexibility.

Dimensions are precisely 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height, aiding easy integration into compact electronic assemblies. The typical forward voltage drop is 1.2 V, ensuring efficient conduction characteristics.

The product is widely used in automotive electronics, industrial power control, and other applications requiring durable and efficient semiconductor switching devices. Its robust design and automotive-grade certification ensure longevity and stable operation in extreme conditions.

Suitable for power management, switching regulators, and general-purpose amplification circuits. Explore more Vishay MOSFETs and related semiconductor products available at EnvMart for critical electronic applications.