Vishay N-Channel MOSFET 8.5 A 60 V Enhancement Mode 8-Pin SOIC SI4850EY-T1-GE3

Vishay SI4850EY-T1-GE3 is a high-performance N-Channel MOSFET transistor designed for efficient power switching and amplification in electronic circuits. It features a maximum continuous drain current of 8.5 amperes and a drain-source voltage rating of 60 volts, making it suitable for demanding semiconductor applications requiring moderate current and voltage handling capability.

The device utilizes enhancement mode channel technology packaged in an 8-pin SOIC surface-mount package which facilitates compact and reliable PCB assembly. Typical applications include power management circuits, DC-DC converters, motor control, and load switching in industrial, consumer electronics, and automotive systems.

Key electrical parameters include a maximum drain-source resistance of 47 milliohms, typical gate charge of 18 nanocoulombs at gate-source voltage, and a maximum power dissipation of 3.3 watts. The MOSFET operates reliably over a wide temperature range from -55°C to 150°C, ensuring robust performance in varying environmental conditions.

The compact dimensions of 5 mm in length, 4 mm in width, and 1.5 mm in height enable space-effective circuit design. The device features a forward voltage of 1.2 V and gate-source voltage ratings from -20 to +20 V, allowing flexible drive conditions.

It is a new product designed to meet rigorous semiconductor performance requirements. High-efficiency N-Channel MOSFET optimized for switching applications. Maximum continuous drain current of 8.5 amperes supports high load currents.

Drain-source voltage rating of 60 volts ensures reliable operation under medium voltage. SOIC 8-pin surface-mount package offers compact PCB footprint. Enhancement mode channel type designed for efficient power control. Typical gate charge of 18 nC at Vgs allows for fast switching speeds.

Low drain-source resistance of 47 milliohms minimizes conduction losses. Operating temperature range from -55°C to 150°C supports varied environmental conditions. Maximum power dissipation of 3.3 watts suitable for moderate power applications.

This MOSFET is primarily suited for industrial electronics, power supply circuits, and semiconductor applications including manufacturing, automotive electronics, and consumer devices requiring efficient power switching components.

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