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Vishay Isolated TrenchFET 2 Type P-Channel MOSFET, 3.1 A, 60 V Enhancement Mode, 8-Pin SOIC SI4948BEY-T1-GE3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin India
Brand Vishay
Height 1.5mm
Length 5mm
Model SI4948BEY-T1-GE3
Width 4mm
Mount Type Surface
Series TrenchFET
Maximum Operating Temperature 175°C
Package Type SOIC
Minimum Operating Temperature -55°C
Pin Count 8
Number of Elements per Chip 2
Channel Type Type P
Maximum Continuous Drain Current Id 3.1A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 150mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.4W
Typical Gate Charge Qg @ Vgs 14.5nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -0.8V
Transistor Configuration Isolated

Key Features

  • Dual P-Channel MOSFET with isolated transistor configuration.
  • Mount type is surface mount with an 8-pin SOIC package.
  • Maximum drain-source resistance of 150 milliohms ensures efficient conduction.
  • Operates with enhancement mode channel and channel type P.
  • Maximum power dissipation up to 2.4 W with a wide temperature range from -55°C to 175°C.
  • Typical gate charge of 14.5 nC at the gate-source voltage.
  • Maximum gate-source voltage rating of ±20 V with forward voltage of -0.8 V.
  • Suitable for reliable use in semiconductor power applications requiring high efficiency.

Product Description

Vishay SI4948BEY-T1-GE3 is an isolated TrenchFET 2 type P-Channel MOSFET designed for high-efficiency power management applications. It supports a maximum continuous drain current of 3.1 A and a maximum drain-source voltage of 60 V. The transistor features an enhancement mode P-Channel semiconductor with an isolated transistor configuration for improved electrical performance.

This MOSFET comes in a surface-mount 8-pin SOIC package with compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height, making it suitable for integration into densely populated circuit boards. It offers a maximum power dissipation of 2.4 W and is rated for operation in extreme temperature environments ranging from -55°C up to 175°C, ensuring reliable operation under harsh industrial conditions.

The device’s maximum drain-source resistance of 150 milliohms coupled with a typical gate charge of 14.5 nC at the gate-source voltage enables efficient switching operation. The maximum gate-source voltage is ±20 V, and the forward voltage is -0.8 V, providing stable transistor control.

This dual P-Channel MOSFET is ideal for use in power electronics, semiconductor discrete component circuits, industrial control systems, and embedded power modules. Its isolated trench technology ensures low switching losses and high speed, essential for power supply regulation and motor control.

Dual P-Channel MOSFET offers high efficiency and reliable switching. Surface-mount 8-pin SOIC package for compact and easy PCB mounting. Wide temperature operating range from -55°C to 175°C for industrial applications. Maximum power dissipation of 2.4 W supports robust load handling.

Typical gate charge of 14.5 nC improves switching speed and reduces losses. Isolated transistor configuration reduces interference and enhances performance. Maximum drain-source voltage of 60 V and current of 3.1 A meets medium power requirements.

Forward voltage of -0.8 V ensures stable transistor operation. Compact physical dimensions optimize space usage in electronic designs.

This product is suitable for electronics manufacturing, power regulation, industrial automation, and semiconductor discrete device applications. The Vishay brand is known for reliable semiconductor components catering to rigorous industrial standards.

Explore more Vishay semiconductor components and power solutions at EnvMart for professional industrial and electronics engineering applications.

Vishay Isolated TrenchFET 2 Type P-Channel MOSFET, 3.1 A, 60 V Enhancement Mode, 8-Pin SOIC SI4948BEY-T1-GE3
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Frequently Asked Questions

The maximum continuous drain current for the Vishay SI4948BEY-T1-GE3 is 3.1 A.

This model has a maximum drain-source voltage rating of 60 V.

The typical gate charge at the gate-source voltage for this unit is 14.5 nC.

The maximum power dissipation for the SI4948BEY-T1-GE3 is 2.4 W.

The dimensions of the 8-pin SOIC package are 5 mm in length, 4 mm in width, and 1.5 mm in height.

This model operates within a temperature range of -55°C to 175°C.

The maximum gate-source voltage rating for this MOSFET is ±20 V.

The SI4948BEY-T1-GE3 features an isolated transistor configuration.

The maximum drain-source resistance for this model is 150 milliohms.

The forward voltage rating is -0.8 V for this MOSFET.

This unit has a channel type of P-Channel and operates in enhancement mode.

The SI4948BEY-T1-GE3 is suitable for power electronics, semiconductor discrete component circuits, and industrial control systems.

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