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| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.5mm |
| Length | 5mm |
| Model | SI4948BEY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 175°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.1A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 150mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.4W |
| Typical Gate Charge Qg @ Vgs | 14.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.8V |
| Transistor Configuration | Isolated |
Vishay SI4948BEY-T1-GE3 is an isolated TrenchFET 2 type P-Channel MOSFET designed for high-efficiency power management applications. It supports a maximum continuous drain current of 3.1 A and a maximum drain-source voltage of 60 V. The transistor features an enhancement mode P-Channel semiconductor with an isolated transistor configuration for improved electrical performance.
This MOSFET comes in a surface-mount 8-pin SOIC package with compact dimensions of 5 mm length, 4 mm width, and 1.5 mm height, making it suitable for integration into densely populated circuit boards. It offers a maximum power dissipation of 2.4 W and is rated for operation in extreme temperature environments ranging from -55°C up to 175°C, ensuring reliable operation under harsh industrial conditions.
The device’s maximum drain-source resistance of 150 milliohms coupled with a typical gate charge of 14.5 nC at the gate-source voltage enables efficient switching operation. The maximum gate-source voltage is ±20 V, and the forward voltage is -0.8 V, providing stable transistor control.
This dual P-Channel MOSFET is ideal for use in power electronics, semiconductor discrete component circuits, industrial control systems, and embedded power modules. Its isolated trench technology ensures low switching losses and high speed, essential for power supply regulation and motor control.
Dual P-Channel MOSFET offers high efficiency and reliable switching. Surface-mount 8-pin SOIC package for compact and easy PCB mounting. Wide temperature operating range from -55°C to 175°C for industrial applications. Maximum power dissipation of 2.4 W supports robust load handling.
Typical gate charge of 14.5 nC improves switching speed and reduces losses. Isolated transistor configuration reduces interference and enhances performance. Maximum drain-source voltage of 60 V and current of 3.1 A meets medium power requirements.
Forward voltage of -0.8 V ensures stable transistor operation. Compact physical dimensions optimize space usage in electronic designs.
This product is suitable for electronics manufacturing, power regulation, industrial automation, and semiconductor discrete device applications. The Vishay brand is known for reliable semiconductor components catering to rigorous industrial standards.
Explore more Vishay semiconductor components and power solutions at EnvMart for professional industrial and electronics engineering applications.
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