World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

Toshiba N-Channel Field Effect Transistor 4.2 A 20 V Enhancement Type, 6-Pin UF6 SSM6K403TU

Free Delivery in India | Lowest Global Shipping Charges

Toshiba N-Channel Field Effect Transistor 4.2 A 20 V Enhancement Type, 6-Pin UF6 SSM6K403TU

Name: Toshiba N-Channel Field Effect Transistor 4.2 A 20 V Enhancement Type, 6-Pin UF6 SSM6K403TU
Brand: Toshiba
SKU: 233767
Price: 20.22 USD
Availability: InStock



Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	Thailand
Brand	Toshiba
Height	700μm
Length	1.7mm
Model	SSM6K403TU
Width	2mm
Mount Type	Surface
Series	SSM6K403TU
Maximum Operating Temperature	150°C
Package Type	UF6
Minimum Operating Temperature	-55°C
Pin Count	6
Automotive Standard	AEC-Q101
Channel Type	N
Maximum Continuous Drain Current Id	4.2A
Maximum Drain Source Voltage Vds	20V
Maximum Drain Source Resistance Rds	66mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	500mW
Typical Gate Charge Qg @ Vgs	16.8nC
Maximum Gate Source Voltage Vgs	10V
Forward Voltage Vf	-0.8V

Key Features

Low ON-resistance of 66mΩ (max) at VGS = 1.5V ensures minimal power loss.
Features enhancement mode with 6-pin UF6 package suitable for surface mount.
Maximum power dissipation of 500mW enables robust thermal performance.
Wide operating temperature range from -55°C to 150°C for versatile industrial use.
Typical gate charge is 16.8nC at VGS, supporting rapid switching.
Automotive standard AEC-Q101 compliant for automotive and industrial reliability.

Product Description

Toshiba SSM6K403TU is a high-performance N-Channel Field Effect Transistor designed for various electronic and industrial applications requiring efficient power switching. It supports a continuous drain current of 4.2A and withstands a maximum drain-source voltage of 20V in enhancement mode operation. The device features a low ON-resistance of 66mΩ at a gate-source voltage of 1.5V, minimizing conduction losses and improving overall efficiency in power management circuits.

This transistor is housed in a compact 6-pin UF6 surface-mount package, providing space-efficient mounting with excellent thermal characteristics. It can dissipate up to 500mW of power, enabling reliability under demanding operating conditions. With a broad operating temperature range from -55°C to 150°C, it is well-suited for rugged environments including automotive, industrial, and consumer electronics.

The transistor boasts a typical gate charge of 16.8nC at the specified gate voltage, supporting fast switching frequencies. Its automotive qualification according to the AEC-Q101 standard ensures dependable performance in safety-critical and high-reliability automotive systems.

Low ON-resistance of 66mΩ reduces power loss in switching applications. Compact 6-pin UF6 surface-mount package fits densely packed PCBs. Capable of continuous 4.2A drain current and 20V drain-source voltage. Wide operating temperature range from -55°C to 150°C for industrial and automotive use.

Typical gate charge of 16.8nC allows fast switching speeds. AEC-Q101 automotive standard qualification ensures high reliability. Small package dimensions support miniaturization of electronic devices.

This product is ideal for industrial, automotive, and electronic circuit designs that demand efficient MOSFET switching with compact footprint and robust thermal and electrical specifications. Browse our semiconductor category for more power transistors suited to various power electronics applications.