onsemi P-Channel MOSFET 1.3 A 30 V Enhancement, 3-Pin SC-70 NTS4173PT1G

The onsemi NTS4173PT1G is a P-Channel MOSFET transistor designed for high efficiency and low power switching in electronic circuits.

Featuring a maximum continuous drain current of 1.3 amperes and a maximum drain-source voltage of 30 volts, this device is ideal for discrete semiconductor applications requiring compact surface mounting.

Enclosed in a 3-pin SC-70 package with tiny dimensions (2.2 mm length, 1.35 mm width, and 900 μm height), it supports enhancement mode operation and offers a typical gate charge of 10.1 nC at recommended gate voltage levels.

This MOSFET offers a maximum power dissipation of 350 mW and operates reliably across a broad temperature range from -55°C to 150°C. Additional features include a forward voltage of -1 V, surface mount package type SC-70, and a maximum gate-source voltage rating of ±12 V.

This device is suitable for use in industrial, consumer electronics, and power management applications where compact size and efficient switching performance are crucial. It complies with general semiconductor standards but does not have specific automotive or other approvals.

Type P channel designed for surface mount applications. Enhancement mode device ensuring efficient switching. Maximum continuous drain current of 1.3 amperes. Drain-source voltage rating of 30 volts. Maximum power dissipation of 350 milliwatts.

Typical gate charge of 10.1 nanocoulombs at gate voltage. Forward voltage of -1 volt. Operating temperature range from -55°C to 150°C. Compact 3-pin SC-70 surface mount package. Dimensions approximately 2.2 mm by 1.35 mm by 900 micrometers.

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