onsemi Type P-Channel MOSFET, 1.3 A, 30 V Enhancement Mode, 3-Pin SC-70 Package NTS4173PT1G

onsemi NTS4173PT1G is a Type P-Channel Enhancement Mode MOSFET designed for low power and compact electronic applications. It features a maximum continuous drain current of 1.3 A and a maximum drain-source voltage of 30 V, making it suitable for efficient switching and amplification in various semiconductor circuits.

The device is housed in a small 3-pin SC-70 surface-mount package, ideal for space-constrained designs in industrial, commercial, and consumer electronics. It offers a low on-resistance of 280 mΩ which reduces power loss and improves efficiency. The typical gate charge of 10.1 nC allows fast switching performance, essential for modern electronic controls.

This MOSFET supports a maximum power dissipation of 350 mW and can reliably operate over a wide temperature range from -55°C to 150°C. The gate voltage tolerance range from -12 V to +12 V ensures robustness against gate overstress during operation.

Its compact dimensions (Length: 2.2 mm, Width: 1.35 mm, Height: 900 μm) and surface mount design enable easy integration on printed circuit boards for discrete semiconductor applications.

Typical use cases include analog switch circuits, load switching in battery-operated devices, power management modules, and general semiconductor switching applications in industrial and consumer electronics.

Enhancement mode P-Channel MOSFET configuration. Maximum continuous drain current: 1.3 A. Maximum drain-source voltage: 30 V. Surface mount package SC-70 with 3 pins. Low resistance Rds(on) of 280 mΩ. Typical gate charge of 10.1 nC at Vgs.

Maximum power dissipation of 350 mW. Operating temperature range: -55°C to 150°C. Maximum gate-source voltage: -12 V to +12 V. Compact dimensions: 2.2 mm length, 1.35 mm width, 900 μm height. Explore a wide range of semiconductors and discrete components with onsemi MOSFETs at EnvMart for your electronic design and manufacturing needs.