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onsemi Isolated Dual N-Channel and P-Channel MOSFET 30 V, 880 mA, 270 mW Power Dissipation, 6-Pin SC-88 Package NTJD4158CT1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 2.2mm |
| Model | NTJD4158CT1G |
| Width | 1.35mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SC-88 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type N, Type P |
| Maximum Continuous Drain Current Id | 880mA |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 500mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 270mW |
| Typical Gate Charge Qg @ Vgs | 0.9nC |
| Maximum Gate Source Voltage Vgs | -20, -12, +12, +20V |
| Forward Voltage Vf | 0.65V |
| Transistor Configuration | Isolated |
Key Features
- This MOSFET supports low control signals and operates efficiently at low battery voltages.
- The N-Channel offers internal ESD protection and can be controlled with logic voltages as low as 1.5V.
- The P-Channel is optimized for load switching applications using onsemis trench technology.
- It has a maximum power dissipation of 270 mW and a maximum operating temperature of +150°C.
- The device is supplied in a surface mount package measuring 2.2 mm by 1.35 mm by 1 mm.
- It is automotive grade compliant with AEC-Q101 standards.
- Ideal for use in electronic components, power management circuits, and semiconductor applications.
Product Description
onsemi NTJD4158CT1G is an isolated dual MOSFET device combining N-Channel and P-Channel transistors in a single 6-pin SC-88 surface mount package. It supports a maximum continuous drain current of 880 mA and a drain-source voltage of 30 V, with an enhancement mode channel.
This MOSFET is designed for efficient switching applications at low voltage levels. The N-channel transistor includes internal electrostatic discharge (ESD) protection and can be activated with logic signals as low as 1.5 V, making it suitable for low voltage and battery-operated devices.
The P-channel transistor is engineered using onsemis trench technology, optimized for load switching tasks in electronic circuits. Its maximum power dissipation rating is 270 mW, and it can operate within a broad temperature range from -55°C up to +150°C.
The compact SC-88 package measures 2.2 mm in length, 1.35 mm in width, and 1 mm in height, suitable for high-density PCB layouts. It conforms to automotive standard AEC-Q101, guaranteeing reliability in automotive and other demanding industrial environments.
Isolated dual N-Channel and P-Channel MOSFET configuration. Maximum continuous drain current: 880 mA. Drain-source voltage: 30 V with enhancement mode channel. Maximum power dissipation of 270 mW. Package type: 6-pin SC-88 Surface Mount Device.
Wide operating temperature range from -55°C to +150°C. Automotive compliant with AEC-Q101 standard.
This MOSFET is suitable for applications in electronic components, power management circuits, automotive systems, and other industrial electronic solutions. It offers efficient load switching, low voltage logic compatibility, and durable operation in harsh conditions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 880 mA.
It can handle a maximum drain-source voltage of 30 V.
The maximum power dissipation rating is 270 mW.
The SC-88 package measures 2.2 mm in length, 1.35 mm in width, and 1 mm in height.
The operating temperature range is from -55°C to +150°C.
This model uses surface mount technology.
It complies with the AEC-Q101 automotive standard.
It features an isolated dual configuration with both N-Channel and P-Channel transistors.
The typical gate charge at Vgs is 0.9 nC.
The maximum gate-source voltage is -20, -12, +12, and +20 V.
The forward voltage is 0.65 V.
This MOSFET is suitable for electronic components, power management circuits, and automotive systems.
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