onsemi NTA Type P-Channel MOSFET 760 mA 20 V Enhancement Mode 3-Pin SC-75 NTA4151PT1G

onsemi NTA4151PT1G is a P-Channel power MOSFET designed for efficient power switching in electronic circuits. It features a maximum continuous drain current of 760 mA and can handle a drain-source voltage of up to 20 volts. This device comes in a compact 3-pin SC-75 surface mount package, facilitating easy PCB integration in various electronic assemblies.

The MOSFET operates in enhancement mode, ensuring it is normally off until a gate voltage is applied, which provides safety in circuit design. With a low drain-source resistance of 1 ohm, the device minimizes conduction losses, improving efficiency in low-voltage power applications.

This MOSFET is rated for maximum power dissipation of 300 mW and is capable of operating within a broad temperature range from -55°C up to 150°C, making it suitable for industrial, automotive, and general electronic applications exposed to varied environmental conditions.

The typical gate charge of 2.1 nC supports rapid switching, ideal for high-frequency applications. Its gate-source voltage tolerance of ±6 V protects the device from voltage spikes, enhancing durability.

Through its surface mount SC-75 package and 3-pin configuration, the NTA4151PT1G enables compact design layouts and improved thermal management. This MOSFET is valuable for power management in consumer electronics, instrumentation, automotive systems, and industrial electronics.

Type P channel MOSFET designed for power switching applications. Maximum continuous drain current is 760 mA for demanding loads. Drain-source voltage rating of 20 volts suitable for low-voltage circuits. Low on-resistance of 1 ohm reduces power loss during conduction.

Enhancement mode channel configuration for normally-off operation. Maximum power dissipation rating is 300 mW to ensure reliability. Supports operating temperatures from -55°C to 150°C for harsh conditions. Compact 3-pin SC-75 package allows efficient surface mounting on PCBs.

Typical gate charge of 2.1 nC ensuring quick switching speeds. Gate to source voltage rating ±6 V protects against voltage spikes.

This product is ideal for industrial, automotive, consumer electronics, and laboratory applications requiring reliable power switching components. Explore our extensive semiconductor category for more MOSFETs and discrete components at EnvMart.