onsemi Isolated Dual Type N and Type P-Channel MOSFET 880mA, 30V, 6-Pin SC-88 Package NTJD4158CT1G

onsemi NTJD4158CT1G is an innovative isolated dual MOSFET device incorporating both Type N and Type P-channel transistors in a single compact 6-pin SC-88 package. Designed for low control signal and low battery voltage applications, it supports high load currents up to 880mA while maintaining efficient switching performance.

The N-channel MOSFET features integrated ESD protection and can be driven by logic signals as low as 1.5V, making it ideal for logic-level control. The P-channel MOSFET is optimized for load switching applications, employing ON Semiconductor's trench technology to improve performance. Together, these transistors provide flexibility in designing power management and switching circuits.

The device operates with a maximum drain-source voltage of 30V, an enhancement mode channel, and a low maximum drain-source resistance of 500mΩ, ensuring minimal power loss. It supports a wide operating temperature range from -55°C to +150°C suitable for automotive and industrial environments.

Maximum continuous drain current: 880mA. Maximum power dissipation: 270mW. Typical gate charge: 0.9nC at Vgs. Maximum gate-source voltage ratings: -20V to +20V. Forward voltage of 0.65V. Compact dimensions: 2.2mm length x 1.35mm width x 1mm height.

Automotive standard AEC-Q101 compliant for robust reliability. Isolated transistor configuration facilitates easy integration into sensitive circuits.

This MOSFET is well-suited for industrial, automotive, and consumer electronics applications requiring efficient power switching with low gate charge and compact footprint. Its dual channel design reduces component count and simplifies circuit layouts.

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