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onsemi Dual N+P Load Switch Power MOSFET 1.3 A, 8 V Enhancement, 6-Pin SC-88 NTJD1155LT1G

Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1mm
Length 2.2mm
Model NTJD1155LT1G
Width 1.35mm
Mount Type Surface
Maximum Operating Temperature +150°C
Package Type SC-88
Minimum Operating Temperature -55°C
Pin Count 6
Number of Elements per Chip 2
Channel Type Type P, Type N
Maximum Continuous Drain Current Id 1.3A
Maximum Drain Source Voltage Vds 8V
Maximum Drain Source Resistance Rds 320mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 400mW
Maximum Gate Source Voltage Vgs 8V
Forward Voltage Vf -0.8V
Transistor Configuration N+P Load Switch

Key Features

  • Operates with a maximum continuous drain current of 1.3 A.
  • Supports a maximum drain-source voltage of 8 V for reliable switching.
  • Low Rds(on) of 320mΩ ensuring minimal conduction losses.
  • Compact SC-88 surface mount package with 6 pins for easy PCB integration.
  • Wide operating temperature range from -55°C to +150°C for robust performance.
  • Features both P-channel and N-channel MOSFET in a single package.
  • N-channel includes internal ESD protection compatible with low voltage logic signals.
  • Optimized for high-side load switching with level shifting capabilities.

Product Description

onsemi NTJD1155LT1G is a dual channel power MOSFET combining P-type and N-type transistors in a single compact 6-pin SC-88 surface mount package. With a maximum continuous drain current of 1.3 A and an 8 V maximum drain-source voltage, this enhancement mode MOSFET is optimized for load switching applications, particularly high side switching with level shift capabilities.

The device operates reliably across a wide temperature range from -55°C up to +150°C. Featuring a low drain-source resistance of 320mΩ and a maximum power dissipation of 400mW, this MOSFET offers efficient conduction with minimal thermal losses. The N-channel transistor incorporates internal ESD protection and can be driven by logic signals as low as 1.5 V, making it suitable for low voltage battery-powered devices.

Typical applications include mobile phones, digital cameras, PDAs, and media players where compact form factor and efficient power switching are critical. The P-channel MOSFET employs ON Semiconductor's trench technology to enhance performance for load switching.

The compact package dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height enable integration into space-constrained designs. The transistor configuration is N+P load switch with 2 elements per chip, supporting low control signal operation over a voltage range of 1.8 to 8.0 V.

Operates with a maximum continuous drain current of 1.3 A. Supports maximum drain-source voltage of 8 V. Low Rds(on) of 320mΩ enables efficient conduction. Compact SC-88 surface mount package with 6 pins. Wide operating temperature range of -55°C to +150°C.

Dual channel includes P and N type MOSFETs. Internal ESD protection on N-channel transistor. Optimized for high side load switching with level shifting. Maximum power dissipation rated at 400mW. Utilizes ON Semiconductor trench technology for improved performance.

This power MOSFET is ideal for industrial & electronic applications including mobile and portable devices, providing high efficiency and reliable load switching in compact form factor. Explore more Power MOSFETs and semiconductor components at EnvMart for varied industrial and manufacturing needs.

onsemi Dual N+P Load Switch Power MOSFET 1.3 A, 8 V Enhancement, 6-Pin SC-88 NTJD1155LT1G
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Frequently Asked Questions

The maximum continuous drain current for this model is 1.3 A.

It supports a maximum drain-source voltage of 8 V.

The low drain-source resistance (Rds(on)) is 320 mΩ, ensuring minimal conduction losses.

The dimensions of the SC-88 package are 2.2 mm in length, 1.35 mm in width, and 1 mm in height.

The device operates reliably across a wide temperature range from -55°C to +150°C.

This power MOSFET has a total of 6 pins.

It features a dual channel configuration with both P-channel and N-channel MOSFETs in a single package.

The maximum power dissipation for this model is rated at 400 mW.

Yes, the N-channel transistor includes internal ESD protection compatible with low voltage logic signals.

This model is optimized for high-side load switching applications, particularly in mobile and portable devices.

The maximum gate-source voltage (Vgs) is 8 V.

The P-channel MOSFET employs ON Semiconductor's trench technology to enhance performance for load switching.

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