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onsemi NTGS Type P-Channel MOSFET, 2.9 A, 60 V Enhancement, 6-Pin TSOP NTGS5120PT1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3.1mm |
| Model | NTGS5120PT1G |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | NTGS |
| Maximum Operating Temperature | 150°C |
| Package Type | TSOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 2.9A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 142mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.4W |
| Typical Gate Charge Qg @ Vgs | 18.1nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1V |
Key Features
- Type P-channel transistor designed for surface mount applications.
- Enhancement mode with maximum drain-source resistance of 142 milliohms.
- Handles maximum power dissipation of 1.4 watts for reliable thermal performance.
- Wide operating temperature range from -55°C to 150°C.
- Compact 6-pin TSOP package with dimensions 3.1 mm length, 1.7 mm width, and 1 mm height.
- Typical gate charge is 18.1 nanocoulombs at specified gate voltage.
- Maximum gate-source voltage rating of -20 V to +20 V ensures robust switching.
- Forward voltage rating of -1 V complies with device specifications.
Product Description
onsemi NTGS5120PT1G is a Type P-Channel MOSFET transistor designed for efficient power switching and amplification in electronic circuits. It features a maximum continuous drain current of 2.9 A and a maximum drain-source voltage of 60 V, housed in a compact 6-pin TSOP surface mount package that measures 3.1 mm in length, 1.7 mm in width, and 1 mm in height.
This enhancement mode MOSFET offers a low on-resistance of 142 milliohms at maximum rating, enabling low power loss and improved thermal management with up to 1.4 W power dissipation. The device supports a wide operating temperature range from -55°C to 150°C, making it suitable for harsh and automotive environments.
The typical gate charge is 18.1 nC at specified gate voltage (Vgs), with gate-source voltage tolerance ranging from -20 V to +20 V, ensuring reliable switching behavior and ruggedness. The forward voltage is rated at -1 V, appropriate for optimized circuit design. This MOSFET complies with the AEC-Q101 automotive standard, indicating high reliability for automotive applications.
Type P-channel transistor designed for surface mount applications. Enhancement mode with maximum drain-source resistance of 142 milliohms. Handles maximum power dissipation of 1.4 watts for reliable thermal performance. Wide operating temperature range from -55°C to 150°C.
Compact 6-pin TSOP package with dimensions 3.1 mm length, 1.7 mm width, and 1 mm height. Typical gate charge is 18.1 nanocoulombs at specified gate voltage. Maximum gate-source voltage rating of -20 V to +20 V ensures robust switching.
Forward voltage rating of -1 V complies with device specifications. Automotive grade compliant to AEC-Q101 standards. Suitable for use in industrial, power management, and electronic circuit applications.
This device is ideal for use in industrial electronics, power conversion, automotive control systems, and general purpose high voltage switching. The NTGS5120PT1G enables designers to enhance power efficiency and durability while maintaining small footprint circuit design.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.9 A.
The maximum drain-source voltage rating is 60 V.
The dimensions of the package are 3.1 mm in length, 1.7 mm in width, and 1 mm in height.
It can handle a maximum power dissipation of 1.4 watts.
The typical gate charge is 18.1 nanocoulombs at the specified gate voltage.
The operating temperature range is from -55°C to 150°C.
The maximum gate-source voltage rating is -20 V to +20 V.
It complies with the AEC-Q101 automotive standard.
The forward voltage rating is -1 V.
It is a Type P-channel enhancement mode MOSFET designed for surface mount applications.
The maximum drain-source resistance is 142 milliohms.
This model is suitable for use in industrial electronics, power management, automotive control systems, and general purpose high voltage switching.
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