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Toshiba Type P-Channel MOSFET 15 A 40 V Enhancement Mode 3-Pin TO-252 TJ15P04M3

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Toshiba Type P-Channel MOSFET 15 A 40 V Enhancement Mode 3-Pin TO-252 TJ15P04M3

Name: Toshiba Type P-Channel MOSFET 15 A 40 V Enhancement Mode 3-Pin TO-252 TJ15P04M3
Brand: Toshiba
SKU: 233656
Price: 0.95 USD
Availability: InStock

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Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin	China
Brand	Toshiba
Height	2.3mm
Length	6.6mm
Model	TJ15P04M3
Width	7.18mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	15A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	48mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	29W
Typical Gate Charge Qg @ Vgs	26nC
Maximum Gate Source Voltage Vgs	20V
Forward Voltage Vf	1.2V

Key Features

Features low drain-source on-resistance of 28 mΩ typical at VGS = -10 V.
Maximum power dissipation rating of 29 W ensures reliable performance.
Operates in enhancement mode with a threshold voltage between -0.8 and -2.0 V.
Supports a maximum gate source voltage of ±20 V for enhanced switching control.
Wide operating temperature range from -55°C to +150°C for industrial applications.
Low leakage current of IDSS = -10 μA at VDS = -40 V reduces power loss.
Compact surface mount TO-252 package measuring 7.18 mm width, 6.6 mm length, and 2.3 mm height.
Suitable for motor driver circuits and power management switches.

Product Description

Toshiba TJ15P04M3 is a high-performance P-Channel MOSFET designed for efficient power switching and control in various electronic applications. It features a maximum continuous drain current of 15 amperes and a maximum drain-source voltage of 40 volts, making it suitable for medium power handling needs.

Housed in a TO-252 surface-mount package with three pins, this MOSFET offers a low drain-source on-resistance of approximately 28 milliohms (typical) at a gate-source voltage of -10 V, which helps minimize conduction losses and improve energy efficiency in circuits.

The transistor operates in enhancement mode with a threshold voltage ranging from -0.8 to -2.0 volts, providing precise switching control and stability. Additionally, it can withstand a maximum gate-source voltage of ±20 volts, providing robustness against voltage spikes.

Designed to operate reliably over a wide temperature range from -55°C to +150°C, the device is suitable for harsh industrial environments and embedded system applications.

The low leakage current of IDSS = -10 microamperes at VDS = -40 V helps reduce standby losses and improves overall system efficiency. The MOSFET's compact dimensions (7.18 mm width, 6.6 mm length, 2.3 mm height) make it ideal for densely packed PCB layouts.

Low drain-source on-resistance minimizes conduction losses. High maximum power dissipation supports demanding applications. Wide operating temperature range enhances reliability in industrial settings. Compact TO-252 package fits varied power management designs.

Low leakage current improves energy efficiency in standby states. Enhancement mode operation allows precise switch control. Compatible with motor drivers and power management circuits.

This MOSFET is particularly suitable for industrial, construction, and electronic manufacturing sectors where efficient power control is required. Its robust specifications make it a reliable choice for engineers designing power switches and motor controllers.

Explore the Electronics & Electricals category for more semiconductor components and power management devices by trusted brands such as Toshiba on EnvMart.