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Toshiba Type P-Channel MOSFET 15 A 40 V Enhancement Mode 3-Pin TO-252 TJ15P04M3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 2.3mm |
| Length | 6.6mm |
| Model | TJ15P04M3 |
| Width | 7.18mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 15A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 48mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 29W |
| Typical Gate Charge Qg @ Vgs | 26nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Low drain-source on-resistance ensures efficient conduction.
- Maximum power dissipation of 29 W for reliable performance.
- Wide operating temperature range from -55°C to 150°C.
- Designed for motor drivers and power management switches.
- Surface mount design with 3-pin configuration for compact PCB integration.
- Typical gate charge of 26 nC at Vgs for fast switching.
- Stable operation with Vth ranging from -0.8 to -2.0 V in enhancement mode.
- Manufactured in China adhering to quality standards.
Product Description
Toshiba TJ15P04M3 is a Type P-Channel Enhancement Mode MOSFET designed for industrial and commercial applications requiring efficient switching and power management. It supports a maximum continuous drain current of 15 A and can withstand drain-source voltages up to 40 V, housed in a compact TO-252 3-pin surface mount package.
This MOSFET features low drain-source on-resistance of typically 28 mΩ at Vgs = -10 V, enabling minimal power loss and heat generation during switching operations. The device operates reliably across a wide temperature range from -55°C to 150°C, making it suitable for harsh environmental conditions.
The typical gate charge of 26 nC allows for fast switching characteristics, beneficial in motor driver circuits and power management switches. Enhancement mode operation with a threshold voltage of -0.8 to -2.0 V ensures precise control over conduction states.
The forward voltage is rated at 1.2 V, and maximum power dissipation reaches 29 W, providing durability for power-intensive applications. The surface mount TO-252 package ensures easy PCB assembly with a low profile and compact footprint.
Applications include motor drivers, power management circuits, and other design scenarios requiring reliable P-channel MOSFET switching devices in electronics, industrial automation, HVAC, and manufacturing controls.
Low drain-source on-resistance ensures efficient conduction. Maximum power dissipation of 29 W for reliable performance. Wide operating temperature range from -55°C to 150°C. Designed for motor drivers and power management switches.
Surface mount design with 3-pin configuration for compact PCB integration. Typical gate charge of 26 nC at Vgs for fast switching. Stable operation with Vth ranging from -0.8 to -2.0 V in enhancement mode. Manufactured in China adhering to quality standards.
Explore our full range of MOSFETs and complementary semiconductors for your industrial and commercial electronics projects at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the Toshiba TJ15P04M3 is 15 A.
This model can withstand a maximum drain-source voltage of 40 V.
The typical gate charge at Vgs for this MOSFET is 26 nC.
It operates reliably across a wide temperature range from -55°C to 150°C.
The Toshiba TJ15P04M3 is housed in a TO-252 package, which is a surface mount design.
The device features a low drain-source on-resistance of typically 28 mΩ at Vgs = -10 V.
This model is designed for applications such as motor drivers and power management switches.
The maximum power dissipation for the Toshiba TJ15P04M3 is 29 W.
The dimensions of this model are 6.6 mm in length, 7.18 mm in width, and 2.3 mm in height.
This device is a Type P-Channel Enhancement Mode MOSFET.
The forward voltage for the Toshiba TJ15P04M3 is rated at 1.2 V.
The maximum gate-source voltage for this MOSFET is 20 V.
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