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| Country of Origin | Thailand |
|---|---|
| Brand | Toshiba |
| Height | 700μm |
| Length | 2.9mm |
| Model | SSM3K339R |
| Width | 1.8mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 390mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 1.1nC |
| Maximum Gate Source Voltage Vgs | 12V |
| Forward Voltage Vf | 1.2V |
The Toshiba SSM3K339R is a high-performance N-Channel enhancement type MOSFET offered in a compact 3-pin SOT-23 surface mount package. Engineered for power management applications, it features a continuous drain current of 2 Amperes and a maximum drain-source voltage of 40 Volts, making it ideal for DC-DC converters, power switches, and other industrial electronics.
This MOSFET offers low drain-source on-resistance (Rds(on)) to improve efficiency and reduce power losses in switching circuits. Its low typical gate charge and forward voltage enable superior switching performance and reduced energy consumption. The component operates efficiently within a wide temperature range from -55°C to 150°C, ensuring reliable use in demanding industrial, commercial, or laboratory environments.
With dimensions of approximately 2.9 mm length, 1.8 mm width, and 700 μm height, the SSM3K339R fits modern compact electronic assemblies. It supports surface mounting for streamlined manufacturing processes.
Applications include power management switches, DC-DC converters, and general-purpose switching in electronic circuits where compact size and high efficiency are paramount. The MOSFET is RoHS compliant and manufactured in Thailand under Toshiba's quality assurance protocols.
Enhancement N-Channel device optimized for low on-resistance. Continuous drain current rated at 2 Amperes for high-performance switching. Maximum drain-source voltage of 40 Volts suitable for typical power electronics. Compact 3-pin SOT-23 surface mount package favors space-saving designs.
Stable operation across wide temperature range (-55°C to 150°C) for industrial reliability. Low gate charge and forward voltage enhance switching efficiency. Surface mount technology enables automated PCB assembly. Manufactured in Thailand leveraging Toshiba's quality standards.
This MOSFET is widely used in industrial electronics, power supplies, telecommunications, and consumer electronics where compactness and efficient power management are critical. Explore more electronic components and discrete semiconductors at EnvMart for your design needs.
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