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Toshiba N-Channel Enhancement MOSFET, 2A Continuous Drain Current, 40V Drain Source Voltage, 3-Pin SOT-23 SSM3K339R

Category MOSFET Brand Toshiba Condition New

Specifications

Country of Origin Thailand
Brand Toshiba
Height 700μm
Length 2.9mm
Model SSM3K339R
Width 1.8mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 2A
Maximum Drain Source Voltage Vds 40V
Maximum Drain Source Resistance Rds 390mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2W
Typical Gate Charge Qg @ Vgs 1.1nC
Maximum Gate Source Voltage Vgs 12V
Forward Voltage Vf 1.2V

Key Features

  • Enhancement type MOSFET optimized for low on-resistance.
  • Maximum continuous drain current of 2 Amperes for reliable operation.
  • Drain-source voltage rating up to 40 Volts suitable for diverse applications.
  • Compact surface mount SOT-23 package with 3 pins for easy PCB integration.
  • Maximum power dissipation rating of 2 Watts ensuring efficient heat management.
  • Operational temperature range from -55°C to 150°C for industrial reliability.
  • Typical gate charge of 1.1 nanocoulombs at Vgs for minimal switching losses.
  • Low forward voltage of 1.2 Volts facilitates efficient conduction.

Product Description

The Toshiba SSM3K339R is a high-performance N-Channel enhancement type MOSFET offered in a compact 3-pin SOT-23 surface mount package. Engineered for power management applications, it features a continuous drain current of 2 Amperes and a maximum drain-source voltage of 40 Volts, making it ideal for DC-DC converters, power switches, and other industrial electronics.

This MOSFET offers low drain-source on-resistance (Rds(on)) to improve efficiency and reduce power losses in switching circuits. Its low typical gate charge and forward voltage enable superior switching performance and reduced energy consumption. The component operates efficiently within a wide temperature range from -55°C to 150°C, ensuring reliable use in demanding industrial, commercial, or laboratory environments.

With dimensions of approximately 2.9 mm length, 1.8 mm width, and 700 μm height, the SSM3K339R fits modern compact electronic assemblies. It supports surface mounting for streamlined manufacturing processes.

Applications include power management switches, DC-DC converters, and general-purpose switching in electronic circuits where compact size and high efficiency are paramount. The MOSFET is RoHS compliant and manufactured in Thailand under Toshiba's quality assurance protocols.

Enhancement N-Channel device optimized for low on-resistance. Continuous drain current rated at 2 Amperes for high-performance switching. Maximum drain-source voltage of 40 Volts suitable for typical power electronics. Compact 3-pin SOT-23 surface mount package favors space-saving designs.

Stable operation across wide temperature range (-55°C to 150°C) for industrial reliability. Low gate charge and forward voltage enhance switching efficiency. Surface mount technology enables automated PCB assembly. Manufactured in Thailand leveraging Toshiba's quality standards.

This MOSFET is widely used in industrial electronics, power supplies, telecommunications, and consumer electronics where compactness and efficient power management are critical. Explore more electronic components and discrete semiconductors at EnvMart for your design needs.

Toshiba N-Channel Enhancement MOSFET, 2A Continuous Drain Current, 40V Drain Source Voltage, 3-Pin SOT-23 SSM3K339R
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Frequently Asked Questions

The maximum continuous drain current for this model is 2 Amperes.

The maximum drain-source voltage rating is 40 Volts.

This MOSFET has dimensions of approximately 2.9 mm in length, 1.8 mm in width, and 700 μm in height.

The SSM3K339R is packaged in a compact 3-pin SOT-23 surface mount package.

The operational temperature range is from -55°C to 150°C.

The typical gate charge at Vgs is 1.1 nanocoulombs.

The forward voltage is 1.2 Volts.

The maximum power dissipation rating for this MOSFET is 2 Watts.

This model features an N-channel type.

It is suitable for applications such as power management switches, DC-DC converters, and general-purpose switching in electronic circuits.

The maximum gate-source voltage for this MOSFET is 12 Volts.

This MOSFET is manufactured in Thailand.

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