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Toshiba N-Channel MOSFET 92 A 40 V Enhancement Mode Surface Mount 8-Pin TSON Package TPN3R704PL
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Height | 850μm |
| Length | 3.1mm |
| Model | TPN3R704PL |
| Width | 3.1mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 92A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 86W |
| Typical Gate Charge Qg @ Vgs | 27nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Supports enhancement mode channel operation for efficient switching.
- Low typical drain-source on-resistance of 3.0 mΩ at VGS=10 V reduces conduction losses.
- Features a small gate charge of 8.1 nC and typical output charge of 20.2 nC for high-speed switching.
- Thermally robust with maximum operating temperature up to 175°C and power dissipation of 86 W.
- Low leakage current maximum of 10 μA at VDS=40 V ensures energy efficiency.
- Minimum operating temperature rated at -55°C suitable for harsh environments.
- Maximum gate-source voltage of 20 V supports a wide voltage operation range.
Product Description
The Toshiba TPN3R704PL is a high-performance N-Channel MOSFET designed for surface mount applications using an 8-pin TSON package. It supports a maximum continuous drain current of 92 A and a maximum drain-source voltage of 40 V, making it suitable for power management in electronic circuits.
This device operates in enhancement mode with a low typical drain-source on-resistance of 3.0 mΩ at a gate-source voltage of 10 V, delivering efficient conduction characteristics. Its small gate charge (QSW) of 8.1 nC and low output charge (Qoss) of 20.2 nC enable rapid switching speeds, which are critical for high-frequency applications such as DC-DC converters and motor drivers.
Thermal reliability is supported through a maximum power dissipation of 86 W and a wide operating temperature range from -55°C up to 175°C, well suited for demanding industrial, automotive, and power electronics environments.
The compact dimensions of 3.1 mm by 3.1 mm footprint with a thickness of 850 µm allow for dense PCB layouts. Additionally, the MOSFET features a low leakage current of 10 µA maximum, contributing to energy efficiency in standby modes.
Enhancement mode N-Channel MOSFET with 92 A continuous drain current. Surface mount 8-Pin TSON package with compact size. Low on-resistance and small gate charge for efficient switching. Rated for high power dissipation and wide temperature operation.
Suitable for use in high-efficiency DC-DC converters, power regulators, and motor drivers.
This component is ideal for industrial, automotive electronics, and power management applications requiring robust, efficient power switching solutions. Browse more MOSFETs and semiconductor devices on EnvMart to find complementary components.
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Frequently Asked Questions
The Toshiba TPN3R704PL has a maximum continuous drain current of 92 A.
It can handle a maximum drain-source voltage of 40 V.
The typical drain-source on-resistance is 3.0 mΩ at a gate-source voltage of 10 V.
This MOSFET has dimensions of 3.1 mm in length and 3.1 mm in width, with a height of 850 μm.
The maximum power dissipation for this model is rated at 86 W.
It operates within a temperature range of -55°C to 175°C.
The maximum gate-source voltage supported is 20 V.
The typical gate charge is 27 nC.
It comes in an 8-pin TSON package suitable for surface mounting.
The maximum leakage current is 10 μA at a drain-source voltage of 40 V.
This MOSFET is suitable for applications in high-efficiency DC-DC converters, power regulators, and motor drivers.
The channel type is N-channel, operating in enhancement mode.
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