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Vishay Si4153DY Type P-Channel MOSFET, -19.3 A Continuous Drain Current, 30 V Drain Source Voltage, 8-Pin SI4153DY-T1-GE3

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Vishay Si4153DY Type P-Channel MOSFET, -19.3 A Continuous Drain Current, 30 V Drain Source Voltage, 8-Pin SI4153DY-T1-GE3

Name: Vishay Si4153DY Type P-Channel MOSFET, -19.3 A Continuous Drain Current, 30 V Drain Source Voltage, 8-Pin SI4153DY-T1-GE3
Brand: Vishay
SKU: 231802
Price: 20.22 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Model	SI4153DY-T1-GE3
Mount Type	Surface
Series	Si4153DY
Maximum Operating Temperature	150°C
Package Type	SO-8
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS
Pin Count	8
Channel Type	Type P
Maximum Continuous Drain Current Id	-19.3A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	95mΩ
Maximum Power Dissipation Pd	5.6W
Typical Gate Charge Qg @ Vgs	31nC
Maximum Gate Source Voltage Vgs	25V

Key Features

Type P channel for efficient power management applications.
Maximum continuous drain current of -19.3 amperes.
Rated for a maximum drain-source voltage of 30 volts.
Surface mount SO-8 package with 8 pins for compact PCB designs.
Low maximum drain-source resistance of 95 milliohms for reduced power loss.
Works in a temperature range from -55°C to 150°C operating temperature.
Maximum power dissipation of 5.6 watts supports reliable operation.
Maximum gate-source voltage rating of 25 volts provides robust control.

Product Description

Vishay SI4153DY-T1-GE3 is a Type P-Channel MOSFET designed for power management and load switching applications. It provides a continuous drain current of -19.3 A and a drain-source voltage rating of 30 V, making it ideal for efficient, reliable switching performance.

Encapsulated in an 8-pin SO-8 surface mount package, this MOSFET features a low maximum drain-source resistance of 95 milliohms to minimize conduction losses and ensure energy-efficient operation. It supports operation over a wide temperature range from -55°C to 150°C, suitable for demanding industrial and electronic environments.

The maximum gate-source voltage is 25 V, allowing for strong gate control, with a typical gate charge of 31 nC enabling fast switching speeds. The device also features a power dissipation capacity of 5.6 W, ensuring thermal reliability under load conditions.

This MOSFET complies with RoHS standards, ensuring environmentally safe use and manufacturing.

Typical industrial applications include power adaptors, DC-DC converters, load switches, and various power management circuits in electronic assemblies. The surface mount SO-8 package supports space-saving PCB designs and automated assembly processes.

Type P channel for power management and load switching. High continuous drain current rating of -19.3 amperes supports heavy load switching. 30 V drain-source voltage rating for mid-range voltage operation. Compact SO-8 8-pin surface mount package suitable for dense circuit layouts.

Low Rds(on) of 95 mΩ reduces power dissipation during conduction. Wide operating temperature range of -55°C to 150°C suitable for harsh conditions. Maximum power dissipation of 5.6 watts ensures sustained device reliability.

Gate voltage tolerance up to 25 V suitable for robust switching control. Typical gate charge of 31 nC supports fast switching speeds. RoHS compliant for environmental safety and compliance. Explore more Vishay MOSFETs and semiconductor components for diverse industrial, electronic, power management, and manufacturing applications at EnvMart.