onsemi N-Channel Power MOSFET 20 V 915 mA Surface Mount SC-75 3-Pin Enhancement Mode NTA4153NT1G

onsemi NTA4153NT1G is a high-quality N-Channel Power MOSFET designed for use in electronic and electrical applications requiring reliable switching at low voltages and moderate currents. The device operates with a maximum continuous drain current of 915 mA and a maximum drain-source voltage of 20 V. It comes in a compact SC-75 surface mount package with 3 pins, facilitating integration into compact circuit designs and printed circuit boards.

This MOSFET features an enhancement mode channel, meaning it remains off when no gate voltage is applied, ensuring robust and safe operation in a variety of electronic circuits. The device is rated for operation across a broad temperature range from -55°C up to 150°C, making it suitable for both industrial and automotive applications where temperature conditions vary.

The maximum drain-source resistance (Rds) is 9.5 Ω, which supports efficient current flow while minimizing power losses in switching operations. With a typical gate charge of 1.82 nC and a maximum power dissipation of 300 mW, this MOSFET supports energy-efficient gate control and thermal management in design environments.

Physical dimensions of the component are compact, with an 800 μm length, 1.6 mm width, and 800 μm height, allowing for dense PCB layouts and custom electronic systems. The forward voltage drop is 1.1 V, contributing to reduced conduction losses and improved circuit efficiency.

This package and configuration are ideal for designers and engineers working on power regulation, amplification, switching, and general electronic component integration in industrial, laboratory, automotive, and consumer electronics.

This MOSFET operates at a maximum continuous drain current of 915 mA. It supports a maximum drain-source voltage of 20 V. The SC-75 package type is surface mount with 3 pins. The device has a low on-resistance of 9.5 Ohms.

Operating temperature ranges from -55°C up to 150°C. Typical gate charge at Vgs is 1.82 nC. Maximum power dissipation is rated at 300 mW. Equipped with an enhancement mode N-Channel. Physical size: length 800 μm, width 1.6 mm, height 800 μm.

Forward voltage drop is 1.1 V. Explore more semiconductor and MOSFET products on EnvMart to find the best components for your application needs.