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Vishay SiA4263DJ Type P-Channel MOSFET, 12 A, 30 V PowerPAK SC-70 SIA4263DJ-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Model | SIA4263DJ-T1-GE3 |
| Mount Type | Surface |
| Series | SiA4263DJ |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK SC-70 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 199mΩ |
| Maximum Power Dissipation Pd | 15.6W |
| Typical Gate Charge Qg @ Vgs | 19.8nC |
| Maximum Gate Source Voltage Vgs | 8V |
Key Features
- Offers 12 A maximum continuous drain current capacity.
- Supports a maximum drain-source voltage of 30 V.
- Features a surface-mount PowerPAK SC-70 package for compact PCB design.
- Maximum drain-source resistance of 199 milliohms ensures efficiency.
- Typical gate charge of 19.8 nanocoulombs at Vgs for fast switching.
- Maximum power dissipation rated at 15.6 watts.
- Operating temperature range from -55°C to 150°C for reliability.
- Maximum gate-source voltage of 8 V for safe operation.
Product Description
Vishay SIA4263DJ-T1-GE3 is a Type P-Channel MOSFET offering a maximum continuous drain current of 12 A and a maximum drain-source voltage of 30 V, housed in a compact PowerPAK SC-70 surface-mount package. This device is designed for efficient power switching and management in electronic applications including battery management, battery switches, load switches, and PA switches for mobile and industrial electronics.
The MOSFET features a low maximum drain-source resistance of 199 milliohms, which minimizes power loss and improves overall efficiency. Its typical gate charge is 19.8 nanocoulombs at Vgs, facilitating fast switching suitable for high-frequency circuits. The device is rated for maximum power dissipation of 15.6 watts, ensuring robust performance under demanding electrical loads.
Operating reliably in a wide temperature range from -55°C to 150°C, the MOSFET is suited for harsh environments. The maximum gate-source voltage of 8 V ensures safe operation and device protection under various circuit conditions. The component is RoHS compliant, conforming to environmental standards for hazardous substance control.
Type P-Channel MOSFET for efficient power control. Supports continuous drain current up to 12 A for demanding applications. Compact PowerPAK SC-70 package facilitates high-density PCB layouts. Low drain-source resistance reduces conduction losses.
Fast switching enabled by low gate charge. High power dissipation rating ensures operational stability. Wide operating temperature range suitable for industrial use. Safe maximum gate-source voltage of 8 V protects circuits.
RoHS compliant for environmental and safety standards. Ideal for mobile device battery management and load switching applications.
This Vishay MOSFET is widely used in electronic component assemblies for automotive, industrial, and consumer electronics sectors. Its surface-mount design and robust electrical characteristics make it an excellent choice for power management and switching circuits. Explore the Electronics & Electricals category on EnvMart for similar high-quality semiconductor devices and discrete components.
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Frequently Asked Questions
The maximum continuous drain current of this MOSFET is 12 A.
It supports a maximum drain-source voltage of 30 V.
This model comes in a PowerPAK SC-70 surface-mount package.
The maximum power dissipation rated for this MOSFET is 15.6 watts.
The typical gate charge at Vgs is 19.8 nanocoulombs.
The maximum drain-source resistance is 199 milliohms.
It operates reliably within a temperature range from -55°C to 150°C.
The maximum gate-source voltage for safe operation is 8 V.
Yes, this MOSFET is RoHS compliant, conforming to environmental standards for hazardous substance control.
It is commonly used in applications such as battery management, load switches, and PA switches for mobile and industrial electronics.
It is a Type P-Channel MOSFET designed for efficient power control.
The country of origin for this MOSFET is India.
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