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Nexperia N-Channel MOSFET, 7.2 A, 30 V Enhancement Mode, 3-Pin SOT-23 PMV20XNER
Specifications
| Country of Origin | China |
|---|---|
| Brand | Nexperia |
| Height | 1mm |
| Length | 3mm |
| Model | PMV20XNER |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | PMV20XNE |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7.2A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 38mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 6.94W |
| Typical Gate Charge Qg @ Vgs | 12.4nC |
| Maximum Gate Source Voltage Vgs | 12V |
| ElectroStatic Discharge (ESD) protection | 2 kV HBM |
Key Features
- This MOSFET uses trench technology for enhanced power dissipation and low threshold voltage.
- It features an enhancement mode channel and is housed in a compact 3-pin SOT-23 package.
- Maximum power dissipation is 6.94 W with electrostatic discharge protection up to 2 kV HBM.
- The device operates between -55°C and 150°C, supporting high reliability in diverse environments.
- Typical gate charge is 12.4 nC at 12 V gate-source voltage, enabling fast switching performance.
- This component is surface mount compatible with a small footprint, ideal for space-constrained designs.
- Key applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.
Product Description
Nexperia PMV20XNER is a high-performance N-Channel enhancement mode MOSFET designed for reliable electronic switching applications. It provides a maximum continuous drain current of 7.2 amperes and a maximum drain-source voltage rating of 30 volts, featuring a compact and surface-mount 3-pin SOT-23 package suitable for modern circuit board layouts.
Constructed with trench MOSFET technology, it offers low threshold voltage characteristics and enhanced power dissipation capability of up to 6.94 watts, enabling efficient thermal management in compact devices. The MOSFET includes electrostatic discharge protection rated at 2 kV (Human Body Model), ensuring robust operation in various industrial environments.
Operating temperature ranges from -55°C to 150°C, making it suitable for demanding industrial, automotive (non-automotive standard certified), and consumer electronics environments. The device’s typical gate charge of 12.4 nanocoulombs at 12 V gate-source voltage allows efficient switching with reduced power losses.
This MOSFET type is ideal for relay driver circuits, high-speed line driver applications, low-side load switching, and various switching circuitry in industrial and commercial electronic equipment.
The small SOT-23 package dimensions (length 3 mm, width 1.4 mm, height 1 mm) contribute to space-saving designs. The product condition is new, ensuring factory-fresh quality and reliability.
Choose the Nexperia PMV20XNER MOSFET for applications requiring high efficiency, compactness, and reliable switching performance. Ideal for electronics manufacturing, prototyping, and repair services in semiconductor-related projects.
Explore more in the Electronics & Electricals category for a wide range of discrete semiconductors and MOSFET devices, enhanced with leading industrial standards and quality from trusted brands like Nexperia.
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Frequently Asked Questions
The maximum continuous drain current for this model is 7.2 amperes.
It has a maximum drain-source voltage rating of 30 volts.
This MOSFET is housed in a compact 3-pin SOT-23 package.
The operating temperature range is from -55°C to 150°C.
The maximum power dissipation is 6.94 watts.
It has a typical gate charge of 12.4 nanocoulombs at a gate-source voltage of 12 volts.
This device provides electrostatic discharge protection rated at 2 kV (Human Body Model).
The maximum gate-source voltage is 12 volts.
The dimensions of the SOT-23 package are 3 mm in length, 1.4 mm in width, and 1 mm in height.
This MOSFET is suitable for applications such as relay drivers, high-speed line drivers, low-side load switches, and various switching circuits.
It is an N-channel enhancement mode MOSFET.
The maximum drain-source resistance is 38 milliohms.
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