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STMicroelectronics MDmesh N-Channel MOSFET 17 A 800 V Enhancement 3-Pin TO-263 STB18NM80
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.75mm |
| Model | STB18NM80 |
| Width | 10.4mm |
| Mount Type | Surface |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 295mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 70nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- High efficiency MDmesh series enhancement channel design.
- Maximum power dissipation of 190 W for robust operation.
- Surface mount package suitable for industrial PCB assemblies.
- Wide operating temperature range from -65°C to 150°C.
- Low gate charge of 70 nC at Vgs enables fast switching.
- Forward voltage is 1.6 V ensuring minimal conduction losses.
- Pin count is 3 for simplified connection.
- Maximum drain source resistance of 295 mΩ allows low on-resistance performance.
Product Description
STMicroelectronics STB18NM80 is a high-performance MDmesh N-Channel MOSFET transistor designed for power switching applications. This MOSFET delivers a continuous drain current of 17 A and can withstand drain source voltages up to 800 V. Packaged in a compact 3-pin TO-263 surface mount form factor, it is optimized for efficient heat dissipation and integration into industrial and electronic circuit designs.
The device features an enhancement channel mode and a low maximum drain source resistance of 295 milliohms, ensuring minimized conduction losses during operation. It supports a maximum power dissipation of 190 W, suitable for demanding power electronics uses. Its gate charge of 70 nC at Vgs facilitates fast switching, enhancing performance in high-frequency environments.
The STB18NM80 MOSFET operates reliably across a broad temperature range from -65°C up to 150°C, making it suitable for harsh industrial conditions. It has a forward voltage of 1.6 V and a maximum gate source voltage rating of ±30 V, enabling robust control and protection against voltage spikes.
Applications include industrial automation, motor drives, power converters, and other electronic power control devices. The device's surface mount design supports automated PCB assembly processes common in modern manufacturing.
High efficiency MDmesh series enhancement channel design. Maximum power dissipation of 190 W for reliable thermal performance. Surface mount TO-263 package for ease of installation. Wide operating temperature range of -65°C to 150°C supports harsh environments.
Low gate charge enables fast switching response for power electronics. Forward voltage of 1.6 V ensures low conduction losses. 3-pin pinout for straightforward implementation. Maximum drain source resistance of 295 mΩ reduces energy loss.
Designed for industrial power electronics applications. Maximum gate source voltage ±30 V ensures device protection. Explore more STMicroelectronics MOSFETs on EnvMart for your industrial and electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 17 A.
It can withstand a maximum drain source voltage of 800 V.
The maximum power dissipation capability is 190 W.
The typical gate charge at Vgs is 70 nC.
It operates reliably across a temperature range from -65°C to 150°C.
The maximum gate source voltage rating is ±30 V.
The maximum drain source resistance is 295 mΩ.
It is packaged in a 3-pin TO-263 surface mount form factor.
This model is suitable for industrial automation, motor drives, and power converters.
The forward voltage is 1.6 V, which minimizes conduction losses.
The dimensions are 10.75 mm in length, 10.4 mm in width, and 4.6 mm in height.
It features an N-channel enhancement mode design.
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