STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 7 A 600 V Enhancement 3-Pin TO-220 STP9NK60ZFP

STMicroelectronics STP9NK60ZFP is a high-performance MDmesh SuperMESH N-Channel MOSFET designed for power switching applications. It provides a continuous drain current of 7 A and a maximum drain-source voltage of 600 V, making it suitable for industrial, electronic, and power management uses. This enhancement mode device comes in a standard 3-pin TO-220 package, facilitating through-hole mounting and ease of integration into various circuit boards.

The MOSFET offers a maximum power dissipation of 30 W, which is adequate for medium power stages in power supplies and converters. The low maximum drain-source resistance of 950 mΩ helps reduce power losses, improving efficiency.

Featuring a typical gate charge of 38 nC at the gate voltage, the MOSFET ensures quick responsivity and switching speed critical for high-frequency power applications. It operates reliably within a temperature range of -55°C to +150°C, providing robustness for demanding environments such as automotive and industrial electronics.

The device's forward voltage of 1.6 V and maximum gate-source voltage rating of ±30 V enrich its gate control and switching capabilities. Its MDmesh SuperMESH technology enhances the device’s electrical performance compared to conventional MOSFETs.

Applications for this MOSFET include power management in consumer electronics, industrial power control, and switching regulators. Its through-hole TO-220 package simplifies assembly and maintenance in manufacturing setups.

This MOSFET features an enhancement mode N-channel configuration optimized for power switching. Maximum continuous drain current is rated at 7 amperes, suitable for mid-power applications. High voltage rating of 600 volts ensures excellent voltage handling capability.

Standard TO-220 package offers easy through-hole mounting compatibility. Low drain-source resistance of 950 milliohms minimizes conduction losses. Robust operating temperature range from -55°C to 150°C enhances reliability in harsh environments.

Maximum power dissipation of 30 watts facilitates efficient heat management. Typical gate charge of 38 nanocoulombs allows for fast switching performance. Forward voltage drop is 1.6 volts, reflecting low conduction losses.

Maximum gate-source voltage of ±30 volts provides strong gate protection.

Choose STMicroelectronics MDmesh SuperMESH N-Channel MOSFET for reliable, efficient switching in industrial, laboratory, and electronic device power circuits. Browse more MOSFETs and semiconductor solutions on EnvMart.